TPN2R304PL Datasheet: Silicon N-channel MOSFET





TPN2R304PL Silicon N-channel MOSFET Datasheet

Part Number TPN2R304PL
Description Silicon N-channel MOSFET
Manufacture Toshiba
Total Page 10 Pages
PDF Download Download TPN2R304PL Datasheet PDF

Features: MOSFETs Silicon N-channel MOS (U-MOS- H) TPN2R304PL 1. Applications • High- Efficiency DC-DC Converters • Switchi ng Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching ( 2) Small gate charge: QSW = 10.8 nC (ty p.) (3) Small output charge: Qoss = 27 nC (typ.) (4) Low drain-source on-resis tance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhanceme nt mode: Vth = 1.4 to 2.4 V (VDS = 10 V , ID = 0.3 mA) 3. Packaging and Interna l Circuit TPN2R304PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015 Toshiba Corporation 1 Start of commercial production 2015-08 2016-1 0-19 Rev.2.0 TPN2R304PL 4. Absolute M aximum Ratings (Note) (Ta = 25  unle ss otherwise specified) Characteristic s Symbol Rating Unit Drain-source v oltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 1), (Note 2) ID 80 A D rain current (DC) (Silicon limit) (Note 1), (Note 2) ID 100 A Drain current .

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MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN2R304PL
1. Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 10.8 nC (typ.)
(3) Small output charge: Qoss = 27 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 1.8 m(typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
TPN2R304PL
TSON Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
©2015 Toshiba Corporation
1
Start of commercial production
2015-08
2016-10-19
Rev.2.0

                    
        






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