Document
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH3R704PL
1. Applications
• High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 8.1 nC (typ.) (3) Small output charge: Qoss = 20.2 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TPH3R704PL
SOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2016 Toshiba Corporation
1
Start of commercial production
2015-10
2016-10-19 Rev.3.0
TPH3R704PL
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 40 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Tc = 25 )
(Note 1)
ID
92 A
Drain current (pulsed)
(t = 100 µs)
(Note 1)
IDP
260 A
Power dissipation
(Tc = 25 )
PD 81 W
Power dissipation
(Note 2)
PD
3.0 W
Power dissipation
(Note 3)
PD
0.96 W
Single-pulse avalanche energy
(Note 4)
EAS
14 mJ
Single-pulse avalanche current
(Note 4)
IAS
92 A
Channel temperature
Tch 175
Storage temperature
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
(Tc = 25 )
Channel-to-ambient thermal resistance
(Ta = 25 )
(Note 2)
Channel-to-ambient thermal resistance
(Ta = 25 )
(Note 3)
Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 32 V, Tch = 25 (initial), L = 1.3 µH, IAS = 92 A
Symbol
Rth(ch-c) Rth(ch-a) Rth(ch-a)
Max Unit
1.83 /W 50 156
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2016 Toshiba Corporation
2
2016-10-19 Rev.3.0
TPH3R704PL
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±0.1 µA
Drain cut-off current
IDSS
VDS = 40 V, VGS = 0 V
10
Drain-source breakdown voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
40 V
Drain-source breakdown voltage (Note 5) V(BR)DSX ID = 10 mA, VGS = -20 V
25
Gate threshold voltage
Vth VDS = 10 V, ID = 0.2 mA
1.4 2.4
Drain-source on-resistance
RDS(ON) VGS = 4.5 V, ID = 13 A
4.2 6.0 mΩ
VGS = 10 V, ID = 46 A
3.0 3.7
Note 5: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time)
Symbol
Ciss Crss Coss rg
tr ton tf toff
Test Condition VDS = 20 V, VGS = 0 V, f = 1 MHz
See Fig. 6.2.1
Min Typ. Max Unit
1910 2500 pF 41 80 470 0.9 1.4 Ω 5.3 ns 14.7 6.2 24
VDD ≈ 20 V VGS = 0 V/ 10 V ID = 46 A RL = 0.43 Ω RGG = 4.7 Ω RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1 Gate-drain charge Gate switch charge Output charge
Symbol Qg
Qgs1 Qgd QSW Qoss
Test Condition VDD ≈ 20 V, VGS = 10 V, ID = 46 A VDD ≈ 20 V, VGS = 4.5 V, ID = 13 A VDD ≈ 20 V, VGS = 10 V, ID = 46 A
VDS = 20 V, VGS = 0 V, f = 1MHz
Min Typ. Max Unit
27 13.3 7.7 4.2 8.1 20.2
nC
©2016 Toshiba Corporation
3
2016-10-19 Rev.3.0
TPH3R704PL
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Reverse drain current (pulsed)
(Note 6)
IDRP
(t = 100 µs)
Diode forward voltage
VDSF
IDR = 92 A, VGS = 0 V
Re.