SQJ200EP Datasheet | Automotive Dual N-Channel MOSFETs





(Datasheet) SQJ200EP Datasheet PDF Download

Part Number SQJ200EP
Description Automotive Dual N-Channel MOSFETs
Manufacture Vishay
Total Page 14 Pages
PDF Download Download SQJ200EP Datasheet PDF

Features: www.vishay.com SQJ200EP Vishay Siliconi x Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFETs PRODUCT SUMMARY N-CH ANNEL 1 N-CHANNEL 2 VDS (V) RDS(on) ( ) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration 20 0.0088 0 .0124 20 Dual N 20 0.0037 0.0050 60 Package PowerPAK SO-8L Dual Asymmetric PowerPAK® SO-8L Dual Asymmetric FEA TURES • TrenchFET® power MOSFET • AEC-Q101 qualified d • 100 % Rg and U IS tested • Material categorization: for definitions of compliance please se e www.vishay.com/doc?99912 D1 D2 6.15 mm 1 Top View 5.13 mm D1 D2 1 2 S1 3 G1 4 S2 G2 Bottom View G1 G2 S1 N-Ch annel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYM BOL N-CHANNEL 1 N-CHANNEL 2 Drain-Sour ce Voltage Gate-Source Voltage Continuo us Drain Current a Continuous Source Cu rrent (Diode Conduction) Pulsed Drain C urrent b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction.

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www.vishay.com
SQJ200EP
Vishay Siliconix
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFETs
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
20
0.0088
0.0124
20
Dual N
20
0.0037
0.0050
60
Package
PowerPAK SO-8L Dual Asymmetric
PowerPAK® SO-8L Dual Asymmetric
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 D2
1
Top View
5.13 mm
D1
D2
1
2 S1
3 G1
4 S2
G2
Bottom View
G1 G2
S1
N-Channel 1 MOSFET
S2
N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL N-CHANNEL 1 N-CHANNEL 2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction)
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
20
20
20
20a
80
22
24.2
27
9
± 20
-55 to +175
260
20
60
50
44
180
40
80
48
16
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount c
SYMBOL
RthJA
RthJC
N-CHANNEL 1
85
5.5
N-CHANNEL 2
85
3.1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-2336-Rev. A, 05-Oct-15
1
Document Number: 67774
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

                    
                    






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