IPDD60R190G7 Datasheet: MOSFET





IPDD60R190G7 MOSFET Datasheet

Part Number IPDD60R190G7
Description MOSFET
Manufacture Infineon
Total Page 14 Pages
PDF Download Download IPDD60R190G7 Datasheet PDF

Features: IPDD60R190G7 MOSFET 600VCoolMOS™G7 PowerTransistor TheC7GOLDseries(G7 )forthefirsttimebringstogetherth ebenefitsof theC7GOLDCoolMOS™te chnology,4pinKelvinSourcecapabilit yand theimprovedthermalpropertieso ftheDDPAKpackagetoenablea possibl eSMDsolutionforhighcurrenttopolo giessuchasPFCupto3kW. Features C7GoldgivesbestinclassFOMRDS(o n)*EossandRDS(on)*Qg. •Suitablefo rhardandsoftswitching(PFCandhigh performanceLLC) •C7Goldtechnolog yenablesbestinclassRDS(on)insmal lestfootprint. •DDPAKpackagehasi nbuilt4thpinKelvinSourceconfigurat ionandlow parasiticsourceinductance (~3nH). •DDPAKpackageisMSL1comp liant,totalPb-free,haseasyvisual i nspectionleadsandisqualifiedforin dustrialapplicationsaccordingto JEDE C47/20/22. •DDPAKSMDpackagecombi nedwithleadfreedieattachprocess e nablesimprovedthermalperformance(Rt h). Pin 1 2 34 5 Benefits •C7GoldFOMRDS(on)*Qgis15%betterthanprevio.

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IPDD60R190G7
MOSFET
600VCoolMOS™G7PowerTransistor
TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof
theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand
theimprovedthermalpropertiesoftheDDPAKpackagetoenablea
possibleSMDsolutionforhighcurrenttopologiessuchasPFCupto3kW.
Features
•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•DDPAKpackagehasinbuilt4thpinKelvinSourceconfigurationandlow
parasiticsourceinductance(~3nH).
•DDPAKpackageisMSL1compliant,totalPb-free,haseasyvisual
inspectionleadsandisqualifiedforindustrialapplicationsaccordingto
JEDEC47/20/22.
•DDPAKSMDpackagecombinedwithleadfreedieattachprocess
enablesimprovedthermalperformance(Rth).
Pin 1
2
34
5
Benefits
•C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling
fasterswitchingleadingtohigherefficiency.
•PossibilitytoincreasseeconomiesofscalesbyusageinPFCandPWM
topologiesintheapplication.
•C7Goldcanreach50minDDPAK115mm2footprint,whereasprevious
BICC7600Vwas40min150mm2D2PAKfootprint.
•ReducingparasiticsourceinductancebyKelvinSourceimproves
efficiencybyfasterswitchingandeaseofuseduetolessringing.
•DDPAKpackageiseasytouseandhasthehighestqualitystandards.
•ImprovedthermalsenableSMDDDPAKpackagetobeusedinhigher
currentdesignsthanhasbeenpreviouslypossible.
Potentialapplications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
PG-HDSOP-10-1
10
9
87
6
Drain
Pin 6-10
Gate
Pin 1
Driver
Source
Pin 2
Power
Source
Pin 3,4,5
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS@Tj,max
650
RDS(on),max
190
Qg,typ
18
ID,pulse
36
ID,continuous @ Tj<150°C 19
V
m
nC
A
A
Eoss@400V
2.17
µJ
Body diode di/dt
680
A/µs
Type/OrderingCode
IPDD60R190G7
Package
PG-HDSOP-10
Marking
60R190G7
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2018-01-05

                    
                    






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