Document
1MBH05D-060
600V / 5A Molded Package
Features
· Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply
Molded IGBT
Outline drawings, mm TO-3PL
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C)
Item
Symbol
Rating
Collector-Emitter voltage
VCES
600
Gate-Emitter voltaga
VGES
±20
Collector DC
Tc=25°C
IC25
21
current
Tc=120°C IC120
5
1ms Tc=25°C Icp
52
Max. power dissipation (IGBT)
PC
80
Max. power dissipation (FWD)
PC
40
Operating temperature
Tj
+150
Storage temperature
Tstg -40 to +150
Screw torque
- 70
Unit V V A A A W W °C °C N·cm
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Symbol
Characteristics
Min.
Typ.
Max.
Zero gate voltage collector current ICES
– – 1.0
Gate-Emitter leakage current
IGES
– – 20
Gate-Emitter threshold voltage
VGE(th)
5.5 – 8.5
Collector-Emitter saturation voltage VCE(sat) – – 3.0
Input capacitance
Cies
– 400
–
Output capacitance
Coes
– 85 –
Reverse transfer capacitance
Cres
– 15 –
Turn-on time
ton
– – 1.2
tr – – 0.6
Turn-off time
toff
– – 1.0
Switching
tf – – 0.35
Time
Turn-on time
ton
– 0.16 –
tr – 0.11 –
Turn-off time
toff
– 0.30 –
tf – – 0.35
FWD forward on voltage VF – – 3.0
Reverse recovery time
trr – – 0.3
Equivalent Circuit Schematic
IGBT +
C:Collector
G:Gate
E:Emitter
Conditions
VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V VCE=10V f=1MHz VCC=300V, IC=5A VGE=±15V RG=330 ohm (Half Bridge) VCC=300V, IC=5A VGE=+15V RG=33 ohm (Half Bridge) IF=5A IF=5A, VGE=-10V, VR=200V, di/dt=100A/µs
FWD
Unit mA µA V V pF
µs
µs
V µs
Thermal resistance characteristics
Item
Symbol
Thermal resistance
Rth(j-c) Rth(j-c)
Characteristics
Min.
Typ.
––
––
Max. 1.56 3.12
Conditions
IGBT FWD
Unit
°C/W °C/W
http://store.iiic.cc/
1MBH05D-060
Characteristics
Collector current vs. Collector-Emitter voltage Tj=25°C
Molded IGBT
Collector current vs. Collector-Emitter voltage Tj=125°C
Collector current : IC (A)
Collector current : IC (A)
Collector-Emitter voltage : VCE (V)
Collector-Emitter voltage : VCE (V)
Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25°C
Collector-Emitter voltage : VCE (V)
Collector-Emitter voltage vs. Gate-Emitter voltage Tj=125°C
Collector-Emitter voltage : VCE (V)
Gate-Emitter voltage : VGE (V)
Switching time vs. Collector current VCC=300V, RG=33Ω, VGE=±15V, Tj=25°C
Gate-Emitter voltage : VGE (V)
Switching time vs. Collector current VCC=300V, RG=33Ω, VGE=±15V, Tj=125°C
Switching time : tf,toff, tr, ton, trr2 (nsec)
Collector current : IC (A)
http://store.iiic.cc/
Collector current : IC (A)
Switching time : tf,toff, tr, ton, trr2 (nsec)
1MBH05D-060
Characteristics
Switching time vs. RG VCC=300V, IC=5A, VGE=±15V, Tj=25°C
IG.