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1MBH05D-060 Dataheets PDF



Part Number 1MBH05D-060
Manufacturers Fuji Electric
Logo Fuji Electric
Description Molded IGBT
Datasheet 1MBH05D-060 Datasheet1MBH05D-060 Datasheet (PDF)

1MBH05D-060 600V / 5A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply Molded IGBT Outline drawings, mm TO-3PL Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Symbol Rating Collector-Emitter voltage VCES 600 Ga.

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1MBH05D-060 600V / 5A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply Molded IGBT Outline drawings, mm TO-3PL Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Symbol Rating Collector-Emitter voltage VCES 600 Gate-Emitter voltaga VGES ±20 Collector DC Tc=25°C IC25 21 current Tc=120°C IC120 5 1ms Tc=25°C Icp 52 Max. power dissipation (IGBT) PC 80 Max. power dissipation (FWD) PC 40 Operating temperature Tj +150 Storage temperature Tstg -40 to +150 Screw torque - 70 Unit V V A A A W W °C °C N·cm Electrical characteristics (at Tc=25°C unless otherwise specified) Item Symbol Characteristics Min. Typ. Max. Zero gate voltage collector current ICES – – 1.0 Gate-Emitter leakage current IGES – – 20 Gate-Emitter threshold voltage VGE(th) 5.5 – 8.5 Collector-Emitter saturation voltage VCE(sat) – – 3.0 Input capacitance Cies – 400 – Output capacitance Coes – 85 – Reverse transfer capacitance Cres – 15 – Turn-on time ton – – 1.2 tr – – 0.6 Turn-off time toff – – 1.0 Switching tf – – 0.35 Time Turn-on time ton – 0.16 – tr – 0.11 – Turn-off time toff – 0.30 – tf – – 0.35 FWD forward on voltage VF – – 3.0 Reverse recovery time trr – – 0.3 Equivalent Circuit Schematic IGBT + C:Collector G:Gate E:Emitter Conditions VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V VCE=10V f=1MHz VCC=300V, IC=5A VGE=±15V RG=330 ohm (Half Bridge) VCC=300V, IC=5A VGE=+15V RG=33 ohm (Half Bridge) IF=5A IF=5A, VGE=-10V, VR=200V, di/dt=100A/µs FWD Unit mA µA V V pF µs µs V µs Thermal resistance characteristics Item Symbol Thermal resistance Rth(j-c) Rth(j-c) Characteristics Min. Typ. –– –– Max. 1.56 3.12 Conditions IGBT FWD Unit °C/W °C/W http://store.iiic.cc/ 1MBH05D-060 Characteristics Collector current vs. Collector-Emitter voltage Tj=25°C Molded IGBT Collector current vs. Collector-Emitter voltage Tj=125°C Collector current : IC (A) Collector current : IC (A) Collector-Emitter voltage : VCE (V) Collector-Emitter voltage : VCE (V) Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25°C Collector-Emitter voltage : VCE (V) Collector-Emitter voltage vs. Gate-Emitter voltage Tj=125°C Collector-Emitter voltage : VCE (V) Gate-Emitter voltage : VGE (V) Switching time vs. Collector current VCC=300V, RG=33Ω, VGE=±15V, Tj=25°C Gate-Emitter voltage : VGE (V) Switching time vs. Collector current VCC=300V, RG=33Ω, VGE=±15V, Tj=125°C Switching time : tf,toff, tr, ton, trr2 (nsec) Collector current : IC (A) http://store.iiic.cc/ Collector current : IC (A) Switching time : tf,toff, tr, ton, trr2 (nsec) 1MBH05D-060 Characteristics Switching time vs. RG VCC=300V, IC=5A, VGE=±15V, Tj=25°C IG.


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