DYNAMIC RANDOM-ACCESS MEMORIES
This data sheet is applicable to TMS418169A
and TMS428169A symbolized by Revision “E”,
and subsequent revisions as des...
Description
This data sheet is applicable to TMS418169A
and TMS428169A symbolized by Revision “E”,
and subsequent revisions as described in the
device symbolization section.
D Organization . . . 1 048576 by 16 Bits D Single 5-V Power Supply for TMS418169A
(± 10% Tolerance)
D Single 3.3-V Power Supply for TMS428169A
(± 0.3 V Tolerance)
D 1 024-Cycle Refresh in 16 ms D Performance Ranges:
ACCESS ACCESS ACCESS READ OR
TIME TIME TIME
EDO
tRAC tCAC MAX MAX
tAA MAX
CYCLE MIN
’418169A-50 50 ns 13 ns 25 ns 20 ns
’418169A-60 60 ns 15 ns 30 ns 25 ns
’418169A-70 70 ns 18 ns 35 ns 30 ns
’428169A-60 60 ns 15 ns 30 ns 25 ns
’428169A-70 70 ns 18 ns 35 ns 30 ns
D Extended-Data-Out (EDO) Operation D xCAS-Before-RAS ( xCBR) Refresh D 3-State Unlatched Output D Low Power Dissipation D High-Reliability Plastic 42-Lead
400-Mil-Wide Surface-Mount Small-Outline
J-Lead (SOJ) Package (DZ Suffix) and
44/50-Lead Surface-Mount Thin
Small-Outline Package ( TSOP) (DGE Suffix)
D Ambient Temperature Range
0°C to 70°C
TMS418169A, TMS428169A
1048576 BY 16-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS892C – AUGUST 1996 – REVISED SEPTEMBER 1997
DZ PACKAGE ( TOP VIEW )
DGE PACKAGE ( TOP VIEW )
VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7
NC NC
W RAS
NC NC A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
42 VSS 41 DQ15 40 DQ14 39 DQ13 38 DQ12 37 VSS 36 DQ11 35 DQ10 34 DQ9 33 DQ8 32 NC 31 LCAS 30 UCAS 29 OE 28 A9 27 A8 26 A7 25 A6 24 A5 23 A4 22 VSS
VCC DQ0 DQ1 DQ2 DQ3 VCC DQ...
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