UMW2301C

UMW R UMW 2301C UMW 2301C P-Channel 20-V(D-S) MOSFET V(BR)DSS -20 V RDS(on)MAX   200 mΩ@-4.5V  290 mΩ@-2.5V   ID 2.0 A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter MARKING A1SHB Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature VDS VGS ID IDM IS PD RθJA TJ Tstg Value -20 ±8 -2.0 -10 -0.72 0.35 357 150 -55 ~+150 Unit V A W ℃/W ℃ www.umw-ic.com 1 UMW R Ta=25 ℃ unless otherwise specified Parameter Symbol Static Drain-source breakdown voltage V(BR)DSS Gate-source threshold voltage VGS(th) Gate-source leakage IGSS Zero gate voltage drain current IDSS Drain-source on-state resistance a RDS(on) Forward transconductance a Dynamicb Input capacitance Output capacitance Reverse transfer capacitance gfs Ciss Coss Crss Total gate charge Qg Test Condition VGS = 0V, ID =-250µA VDS =VGS, ID =-250µA VDS =0V, VGS =±8V VDS =-20V, VGS =0V VGS =-4.5V, ID =-2.8A VGS =-2.5V, ID =-2.0A VDS =-5V, ID =-2.8A VDS =-10V,VGS =0V,f =1MHz VDS =-10V,VGS =-4.5V,ID =-3A Gate-source charge Gate-drain charge Gate resistance Turn-on delay time Qgs Qgd Rg td(on) Rise time tr Turn-off delay time td(off)...