HX2300

SOT-23-3 Plastic-Encapsulate Transistors HX2300 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING: 00A8C MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage ± 10 V ID Drain current 5.0 A PD Power Dissipation 1W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 20 V Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 0.6 0.75 1.5 V Gate-body Leakage IGSS VDS=0V, VGS=±10V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA VGS=1.8 V, ID=1A 62 75 mΩ Drain-Source On-Resistance rDS(ON) VGS=2.5 V, ID=4A 50 62 mΩ VGS=4.5V, ID=5A 32 40 mΩ Forward Trans conductance gfs VDS=5V, ID=5A 9s Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS=15V, VGS=0V, f=1MHz 888 144 pF 115 Switching Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time td(on) tr td(off) tf VDD=10V, ID=1A , VGS=4.5V RGEN=6Ω RL =10Ω 32 nS 15 nS 50 nS 32 nS Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg VDS=10V, ID=3.5A, Qgs VGS=4.5V, Qgd 17 nC 2.5 nC 5.4 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V...