SOT-23-3 Plastic-Encapsulate Transistors
HX3401MOSFET(P-Channel)
FEATURES
High Power and current handing capability Lead...
SOT-23-3 Plastic-Encapsulate
Transistors
HX3401MOSFET(P-Channel)
FEATURES
High Power and current handing capability Lead free product is acquired Surface Mount Package MARKING: X18V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
-30 V
VGS Gate-Source voltage
±12
V
ID Drain current
-4.2 A
PD Power Dissipation
1.2 W
Tj Junction Temperature
-55-150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=-250uA
-30
V
Gate-Threshold Voltage
Vth(GS) VDS= VGS, ID=-250 uA
-0.7
-1
-1.4 V
Gate-body Leakage Zero Gate Voltage Drain Current
IGSS IDSS
VDS=0V, VGS=±12V VDS=-30V, VGS=0V VGS=-2.5V, ID=-1A
±100
nA
1 uA 55 90 mΩ
Drain-Source On-Resistance
RDS(ON) VGS=-4.5V, ID=-4A
52 75 mΩ
Forward Trans conductance
VGS=-10V, ID=-4.2A gfs VDS=-5V, ID=-4.2A
48 mΩ 10 s
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS=-15V, VGS=0V, f=1MHz
880 115 pF 70
Switching Capacitance
Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
td(on) tr
td(off) tf
VDD=-15V, ID=-4.2A, VGS=-10V RGEN=6Ω
7 nS 3 nS 30 nS 12 nS
Total Gate Charge Gate-Source Charge
Qg VDS=-15V, ID=-4A, Qgs VGS=-4.5V,
9.5 nC 2 nC
Gate-Drain Charge
Qgd
3 nC
Drain-Source Diode Characteristics
Diode...
