HX3400

SOT-23-3 Plastic-Encapsulate Transistors HX3400 MOSFET(N-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mout Package MARKING: XORB MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 30 V VGS Gate-Source voltage ±12 V ID Drain current 5.8 A PD Power Dissipation 1.4 W Tj Junction Temperature -55-150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 0.7 1.0 1.4 V Gate-body Leakage IGSS VDS=0V, VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA VGS=2.5V, ID=4A 43 54 mΩ Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=5A 28 35 mΩ VGS=10V, ID=5.8A 24 39 mΩ Forward Trans conductance gfs VDS=5V, ID=5A 10 s Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS=15V, VGS=0V, f=1MHz 823 99 pF 77 Switching Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time td(on) tr td(off) tf VDD=15V, ID=2.9A, VGS=10V RGEN=3Ω RGEN=2.7Ω 3.3 nS 4.8 nS 26 nS 4 nS Total Gate Charge Gate-Source Charge Qg VDS=15V, ID=5.8A, Qgs VGS=4.5V, 9.5 nC 1.5 nC Gate-Drain Charge Qgd 3 nC Drain-Source Diode Characteristics D...