HX3402S

SOT-23-3 Plastic-Encapsulate Transistors HX3402S MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING: A29T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage ±8 V ID Drain current 3.6 A PD Power Dissipation 1W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 20 V Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 0.5 0.75 1.2 V Gate-body Leakage IGSS VDS=0V, VGS=±10V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Drain-Source On-Resistance rDS(ON) VGS=2.5V, ID=3A VGS=4.5V, ID=3.6A 42 70 mΩ 38 52 mΩ Forward Trans conductance gfs VDS=5V, ID=3A 9s Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS=10V, VGS=0V, f=1MHz 300 120 pF 80 Switching Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time td(on) tr td(off) tf VDD=10V, ID= 3.6A, VGS=4.5V RGEN=6Ω 10 15 nS 50 80 nS 17 60 nS 10 25 nS Total Gate Charge Gate-Source Charge Qg VDS=10V, ID=3.6A, Qgs VGS=4.5V, 4.0 10 nC 0.65 nC Gate-Drain Charge Qgd 1.5 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V, IS= 3A 0.75 1.2...