SI2301

SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃)*1 Ta=25℃ Ta=70℃ Pulsed Drain Current *2 Power Dissipation *1 Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient *1 *3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg *1 Surface Mounted on FR4 Board, t ≤ 5 sec. *2 Pulse width limited by maximum junction temperature. *3 Surface Mounted on FR4 Board. 5 sec Steady State -20 ±8 -2.4 -2.2 -1.9 -1.8 -10 0.9 0.7 0.57 0.45 120 145 140 175 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.cn 1 SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage IGSS VGS(th) Static Drain-Source On-Resistance RDS(On) On state drain current *1 Forward Transconductance *1 Input Capacitance *2 Output Capacitance *2 Reverse Transfer Capacitance *2 Total Gate Charge *2 Gate Source Charge *2 Gate Drain Charge *2 Turn-On Del...