ASDM2301ZA

www.ascendsemi.com FEATURES ● VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.5V(Typ) -20V 65mΩ 83mΩ -3 A ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package ASDM2301ZA 20V P-CHANNEL MOSFET D G Application ●PWM applications ●Load switch ●Power management SOT-23 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V Limit -20 ±10 -3 -10 1 -55 To 150 Unit V V A A W ℃ 125 ℃/W Min Typ Max Unit -20 - V - - -1 μA NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd www.ascendsemi.com 20V PA-CSHADNMNE2L3M0O1SZFAET Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Cha...