UMW2300A

UMW R UMW 2300A UMW 2300N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX   25mΩ@4.5V  20 V 34.5mΩ@2.5V   ID 6A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter MARKING C009T Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature VDS VGS ID IS PD RθJA TJ TSTG Value 20 ±12 6 0.6 312.5 150 -55 ~+150 Unit V A W ℃/W ℃ www.umw-ic.com 1 UMW R UMW 2300A Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage Zero gate voltage drain current Drain-source on-resistancea Forward transconductancea V(BR)DSS VGS(th) IGSS IDSS rDS(on) gfs VGS = 0V, ID =10µA VDS =VGS, ID =50µA VDS =0V, VGS =±8V VDS =20V, VGS =0V VGS =4.5V, ID = 6 A VGS =2.5V, ID =5.2A VDS =5V, ID =3.6A Diode forward voltage VSD IS=0.94A,VGS=0V Dynamic Total gate charge Gate-source charge Gate-drain charge Input capacitance b Output capacitance b Reverse transfer capacitanceb Switchingb Turn-on delay time Rise time Turn-off delay time Fall time Qg Qgs Qgd Ciss Coss Crss VDS =10V,VGS =4.5V,ID =3.6A VDS =10V,VGS =0V,f=1MHz td(on) tr td(off) tf VDD=10V, RL=5.5Ω, ID ≈3.6A...