20-VD-S MOSFET. C009T Datasheet

C009T Datasheet PDF, Equivalent


Part Number

C009T

Description

N-Channel 20-V(D-S) MOSFET

Manufacture

UMW

Total Page 4 Pages
PDF Download
Download C009T Datasheet PDF


C009T Datasheet
UMW R
UMW 2300A
UMW 2300N-Channel 20-V(D-S) MOSFET
V(BR)DSS
RDS(on)MAX
  25mΩ@4.5V 
20 V
34.5mΩ@2.5V  
ID
6A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z TrenchFET Power MOSFET
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
C009T
Equivalent Circuit
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source-Drain Current(Diode Conduction)
Power Dissipation
Thermal Resistance from Junction to Ambient (t5s)
Operating Junction
Storage Temperature
VDS
VGS
ID
IS
PD
RθJA
TJ
TSTG
Value
20
±12
6
0.6
312.5
150
-55 ~+150
Unit
V
A
W
/W
www.umw-ic.com
1 友台半导体有限公司

C009T Datasheet
UMW R
UMW 2300A
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
Static
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
Drain-source on-resistancea
Forward transconductancea
V(BR)DSS
VGS(th)
IGSS
IDSS
rDS(on)
gfs
VGS = 0V, ID =10µA
VDS =VGS, ID =50µA
VDS =0V, VGS =±8V
VDS =20V, VGS =0V
VGS =4.5V, ID = 6 A
VGS =2.5V, ID =5.2A
VDS =5V, ID =3.6A
Diode forward voltage
VSD IS=0.94A,VGS=0V
Dynamic
Total gate charge
Gate-source charge
Gate-drain charge
Input capacitance b
Output capacitance b
Reverse transfer capacitanceb
Switchingb
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS =10V,VGS =4.5V,ID =3.6A
VDS =10V,VGS =0V,f=1MHz
td(on)
tr
td(off)
tf
VDD=10V,
RL=5.5, ID 3.6A,
VGEN=4.5V,Rg=6
Notes :
a. Pulse Test : Pulse width300µs, duty cycle 2%.
b. These parameters have no way to verify.
Min Typ Max Units
20
0.40 1
±100
1
0.021 0.025
0.028 0.034
8
0.74 1.2
V
nA
µA
S
V
7.7 10
0.32 nC
2.1
574
70 pF
60
78.7
128
453
80.9
ns
www.umw-ic.com
2 友台半导体有限公司


Features Datasheet pdf UMW R UMW 2300A UMW 2300N-Channel 20-V (D-S) MOSFET V(BR)DSS RDS(on)MAX   25mΩ@4.5V  20 V 34.5mΩ@2.5V   ID 6A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLI CATION z Load Switch for Portable Devic es z DC/DC Converter MARKING C009T Eq uivalent Circuit Maximum ratings (Ta=2 5℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage G ate-Source Voltage Continuous Drain Cur rent Continuous Source-Drain Current(Di ode Conduction) Power Dissipation Therm al Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Tem perature VDS VGS ID IS PD RθJA TJ TST G Value 20 ±12 6 0.6 312.5 150 -55 ~+ 150 Unit V A W ℃/W ℃ www.umw-ic.c om 1 UMW R UMW 2300A Ta=25 ℃ unl ess otherwise specified Parameter Sym bol Test Condition Static Drain-sourc e breakdown voltage Gate-threshold volt age Gate-body leakage Zero gate voltage drain current Drain-source on-resistan cea Forward transconductancea V(BR)DSS VGS(th) IGSS IDSS rDS(on) gfs VGS = 0V, .
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