C009T

Production specification N-Channel Enhancement Mode Field Effect Transistor BL2300 FEATURES z VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A Pb z VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free z VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A APPLICATIONS z Power Management in Note book. z Portable Equipment. z Battery Powered System. z Load Switch. z DSC. ORDERING INFORMATION Type No. Marking BL2300 C009T SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 20 VGSS Gate -Source voltage ±10 ID Maximum Drain current TA=25℃ 3.8 IDM PD RθJA TJ,Tstg Pulsed Drain current Power Dissipation Thermal resistance,Junction-to-Ambient Operating Junction and StorageTemperature 15 1.25 100 -55 to 150 Units V V A A W ℃/W ℃ C229 Rev.A www.gmicroelec.com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL2300 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Drain-Source on-resistance Diode forward voltage On-State Drain Current Forward Transconductance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Symbol Test conditions V(BR)DSS VGS(th) IGSS VGS=0V,ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=10V VDS=0V, V...