Effect Transistor. C009T Datasheet

C009T Datasheet PDF, Equivalent


Part Number

C009T

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

GME

Total Page 3 Pages
PDF Download
Download C009T Datasheet PDF


C009T Datasheet
Production specification
N-Channel Enhancement Mode Field Effect Transistor
BL2300
FEATURES
z VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A
Pb
z VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free
z VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A
APPLICATIONS
z Power Management in Note book.
z Portable Equipment.
z Battery Powered System.
z Load Switch.
z DSC.
ORDERING INFORMATION
Type No.
Marking
BL2300
C009T
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
20
VGSS
Gate -Source voltage
±10
ID Maximum Drain current TA=25
3.8
IDM
PD
RθJA
TJ,Tstg
Pulsed Drain current
Power Dissipation
Thermal resistance,Junction-to-Ambient
Operating Junction and StorageTemperature
15
1.25
100
-55 to 150
Units
V
V
A
A
W
/W
C229
Rev.A
www.gmicroelec.com
1

C009T Datasheet
Production specification
N-Channel Enhancement Mode Field Effect Transistor
BL2300
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
Drain-Source on-resistance
Diode forward voltage
On-State Drain Current
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol Test conditions
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=10V
VDS=0V, VGS=-10V
IDSS VDS=20V, VGS=0V
RDS(ON)
VSD
ID(ON)
gF
Qg
VGS=4.5V,ID=5.0A
VGS=2.5V,ID=4.0A
VGS=1.8V,ID=1.0A
VGS=0V,IS=1.25A
VDS=5V, VGS=4.5V
VDS=5V, ,ID=5A
Qgs
Qgd
VDS=10V,VGS=4.5V,ID=3.5A
Rg
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tR
VDS=0V,VGS=0V,f=1MHz
VDS=15V,VGS=0V,f=1.0MHz
VDD =10V,RL = 10,
,ID=1A, VGS=4.5V,RGEN= 6
MIN
20
0.6
-
-
-
-
-
-
18
5
-
-
-
-
-
-
-
-
-
-
-
TYP
-
0.78
-
-
-
32
50
62
0.825
-
-
16.8
2.5
5.4
7.5
888
144
115
31.8
14.5
50.3
31.9
MAX
-
1.5
100
-100
1
40
60
75
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V
nA
μA
m
V
A
S
nC
pF
ns
C229
Rev.A
www.gmicroelec.com
2


Features Datasheet pdf Production specification N-Channel Enha ncement Mode Field Effect Transistor BL 2300 FEATURES z VDS=20V,RDS(ON)=40m @ VGS=4.5V,ID=5.0A Pb z VDS=20V,RDS(ON) =60m @VGS=2.5V,ID=4.0A Lead-free z VDS =20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A AP PLICATIONS z Power Management in Note b ook. z Portable Equipment. z Battery Po wered System. z Load Switch. z DSC. ORD ERING INFORMATION Type No. Marking B L2300 C009T SOT-23 Package Code SOT-2 3 MAXIMUM RATING @ Ta=25℃ unless oth erwise specified Symbol Parameter Va lue VDSS Drain-Source voltage 20 VG SS Gate -Source voltage ±10 ID Maxi mum Drain current TA=25℃ 3.8 IDM PD RθJA TJ,Tstg Pulsed Drain current Po wer Dissipation Thermal resistance,Junc tion-to-Ambient Operating Junction and StorageTemperature 15 1.25 100 -55 to 150 Units V V A A W ℃/W ℃ C229 Re v.A www.gmicroelec.com 1 Production s pecification N-Channel Enhancement Mod e Field Effect Transistor BL2300 ELECT RICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Drai.
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