SW1N60E

SW1N60E N-channel Enhanced mode TO-92/TO-251 MOSFET Features TO-92 TO-251  High ruggedness  Low RDS(ON) (Typ7.3Ω)@VGS=10V  Low Gate Charge (Typ3.7nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Charge,Adaptor,LED 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 600V ID : 1A RDS(ON) : 7.3Ω 2 1 3 Order Codes Item 1 2 Sales Type SW I 1N60E SW C 1N60E Marking SW 1N60E SW 1N60E Package TO-251 TO-92 Packaging TUBE TAPE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy (note 1) (note 2) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. Value TO-251 TO-92 600 1.0* 0.63* 4. ±30 85 29 4.5 103 3.6 0.8 0.003 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC *. Drain current is limited by junction temperature. Thermal characteristics ...