Silicon P-Channel MOSFET
2SJ177
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switc...
Description
2SJ177
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device
Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
TO-220FM
D 12 3 1. Gate
G 2. Drain 3. Source
S
2SJ177
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
IDR Pch*2 Tch Tstg
Ratings –60 ±20 –20 –80 –20 35 150 –55 to +150
Unit V V A A A W °C °C
2
2SJ177
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
–60
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
— — –1.0 —
—
Forward transfer admittance Input capacitance
|yfs| Ciss
8 —
Typ Max Unit ——V
——V
— — — 0.065
±10 –250 –2.0 0.085
µA µA V Ω
0.09 13 1850
0.13 — —
S pF
Output capacitance Reverse transfer capacitance Turn-on delay time
Coss Crss td(on)
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time Note 1. Pulse test
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