2SJ177

2SJ177 Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SJ177 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) IDR Pch*2 Tch Tstg Ratings –60 ±20 –20 –80 –20 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ177 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS –60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — –1.0 — — Forward transfer admittance Input capacitance |yfs| Ciss 8 — Typ Max Unit ——V ——V — — — 0.065 ±10 –250 –2.0 0.085 µA µA V Ω 0.09 13 1850 0.13 — — S pF Output capacitance Reverse transfer capacitance Turn-on delay time Coss Crss td(on) Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test ...