N-Channel Enhancement Mode MOSFET
HY1904D/U/V
Feature Description
40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V
100% Avalanc...
Description
HY1904D/U/V
Feature Description
40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET Pin Description
TO-252-2L TO-251-3L
TO-251-3S
Applications
Power Management for Inverter Systems
Ordering and Marking Information
N-Channel MOSFET
DU
HY1904 HY1904
YYXXXJWW G YYXXXJWW G
V
HY1904
YYXXXJWW G
Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code YYXXX WW
Assembly Material G:Halogen Free
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
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1
V1.0
HY1904D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
I...
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