Document
AON7404G
20V N-Channel MOSFET
General Description
• Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V)
Applications
• DC/DC Converters in Computing, Servers, and POL • Battery protection switch
100% UIS Tested 100% Rg Tested
20V 20A < 5.3mΩ < 6.8mΩ
DFN 3x3_EP
Top View
Bottom View
Pin 1
Top View
S1 S2 S3 G4
8D 7D 6D 5D
G
D S
Orderable Part Number
AON7404G
Package Type
DFN 3x3 EP
Form
Tape & Reel
Minimum Order Quantity
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain Current G Avalanche Current C
TA=25°C TA=70°C
Avalanche energy L=0.1mH
TC=25°C Power Dissipation B TC=100°C
C
VGS ID
IDM IDSM
IAS EAS PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 20 ±12 20 20 80 20 20 40 80 28 11 5 3.2
-55 to 150
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 20 45 3.7
Max 25 55 4.5
Units °C/W °C/W °C/W
Rev.1.0: August 2017
www.aosmd.com
Page 1 of 6
AON7404G
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250μA, VGS=0V VDS=20V, VGS=0V
IGSS VGS(th)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage
VDS=0V, VGS=±12V VDS=VGS, ID=250mA
VGS=4.5V, ID=20A
Static Drain-Source On-Resistance
VGS=2.5V, ID=18A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=10V, ID=20A
VGS=10V, VDS=10V, RL=0.5W, RGEN=3W
IF=20A, di/dt=500A/ms IF=20A, di/dt=500A/ms
Min 20 0.45
1.2
Typ
0.85 4.4 5.9 5.4 100 0.6
3300 485 370 2.4
31 5.2 8 7.5 15 72 21 17 30
Max Units
1 5 ±100 1.25 5.3 7.2 6.8
1 20
V
μA
nA V
mΩ
mΩ S V A
pF pF pF 3.6 Ω
45 nC nC nC ns ns ns ns
ns nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2017
www.aosmd.com
Page 2 of 6
AON7404G
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80 2V
60 2.5V
4.5V 40
80 60 40
ID (A)
ID (A)
20
VGS=1.5V
20
VDS=5V 125°C
25°C
0 012345
VDS (Volts) Figure 1: On-Region Characteristics (Note E)
7
0 0 0.5 1 1.5 2 2.5 3
VGS (Volts) Figure 2: Transfer Characteristics (Note E)
1.6
6 VGS=2.5V 5
1.4
VGS=4.5V ID=20A
1.2
Normalized On-Resistance
RDS(ON) (mW)
4 VGS=4.5V
1 VGS=2.5V ID=18A
3 0 5 10 15 20 25 30
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
11 ID=20A
9
0.8 0
25 50 75 100 125 150 175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00 1.0E-01
125°C
IS (A)
7 125°C
5
25°C
3 0 2 4 6 8 10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source .