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AON7404G Dataheets PDF



Part Number AON7404G
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 20V N-Channel MOSFET
Datasheet AON7404G DatasheetAON7404G Datasheet (PDF)

AON7404G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Applications • DC/DC Converters in Computing, Servers, and POL • Battery protection switch 100% UIS Tested 100% Rg Tested 20V 20A < 5.3mΩ < 6.8mΩ DFN 3x3_EP Top View Bottom View Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D G D S Orderable Part Number AON7404G Package Type DFN 3.

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AON7404G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Applications • DC/DC Converters in Computing, Servers, and POL • Battery protection switch 100% UIS Tested 100% Rg Tested 20V 20A < 5.3mΩ < 6.8mΩ DFN 3x3_EP Top View Bottom View Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D G D S Orderable Part Number AON7404G Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current G Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 20 20 80 20 20 40 80 28 11 5 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 20 45 3.7 Max 25 55 4.5 Units °C/W °C/W °C/W Rev.1.0: August 2017 www.aosmd.com Page 1 of 6 AON7404G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=20V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS, ID=250mA VGS=4.5V, ID=20A Static Drain-Source On-Resistance VGS=2.5V, ID=18A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VGS=4.5V, VDS=10V, ID=20A VGS=10V, VDS=10V, RL=0.5W, RGEN=3W IF=20A, di/dt=500A/ms IF=20A, di/dt=500A/ms Min 20 0.45 1.2 Typ 0.85 4.4 5.9 5.4 100 0.6 3300 485 370 2.4 31 5.2 8 7.5 15 72 21 17 30 Max Units 1 5 ±100 1.25 5.3 7.2 6.8 1 20 V μA nA V mΩ mΩ S V A pF pF pF 3.6 Ω 45 nC nC nC ns ns ns ns ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2017 www.aosmd.com Page 2 of 6 AON7404G TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 2V 60 2.5V 4.5V 40 80 60 40 ID (A) ID (A) 20 VGS=1.5V 20 VDS=5V 125°C 25°C 0 012345 VDS (Volts) Figure 1: On-Region Characteristics (Note E) 7 0 0 0.5 1 1.5 2 2.5 3 VGS (Volts) Figure 2: Transfer Characteristics (Note E) 1.6 6 VGS=2.5V 5 1.4 VGS=4.5V ID=20A 1.2 Normalized On-Resistance RDS(ON) (mW) 4 VGS=4.5V 1 VGS=2.5V ID=18A 3 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 11 ID=20A 9 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 1.0E+00 1.0E-01 125°C IS (A) 7 125°C 5 25°C 3 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source .


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