ULTRA LOW NOISE SINGLE N-CHANNEL JFET
LSK170 A/B/C/D
High Input Impedance & High Gain, Ultra-Low Noise Single JFET
Ultra-Low Noise at Both High & Low Frequenc...
Description
LSK170 A/B/C/D
High Input Impedance & High Gain, Ultra-Low Noise Single JFET
Ultra-Low Noise at Both High & Low Frequencies With a Narrow Range of IDSS
Absolute Maximum Ratings @ 25 °C (unless otherwise stated)
Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation @ +25°C Maximum Currents Gate Forward Current Maximum Voltages Gate to Source Gate to Drain
-55 to +150°C -55 to +135°C
400mW
IG(F) = 10mA
VGSS = 40V VGDS = 40V
TO-92 3L
TOP VIEW
123
DSG
SOT-23 3L
TOSPOVTIE-2W3 TOP VIEW
D1 S2
3G
SOT-89 3L
TOP VIEW
G
123 SGD
Features
ULTRA LOW NOISE (f =1khz): en = 0.9nV/√Hz
High Breakdown Voltage: BVGSS = 40V min
High Gain: Gfs = 22mS (typ) High Input Impedance:
20GΩ typ Low Capacitance: 22pF max
Improved Second Source Replacement for 2SK170
For Equivalent Monolithic-Dual, See the LSK389 Series
Benefits
Direct Pin-For-Pin Replacement of Toshiba's 2SK170
Optimized to Provide Low Noise at Both High and Low Frequencies With a Narrow Range of IDSS and Low Capacitance
Low Noise to Capacitance Ratio and Narrow Range of Low Value IDSS Provide Solutions for Low Noise Applications Which Cannot Tolerate High Values of Capacitance or Wide Ranges of IDSS
Applications
Audio Amplifiers and Preamps
Discrete Low-Noise Operational Amplifiers
Guitar Pickups Effects Pedals Microphones Audio Mixer
Consoles Acoustic Sensors Sonobouys Hydrophones
Applications Cont’d
Chemical and Rad...
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