LSK170D

LSK170 A/B/C/D High Input Impedance & High Gain, Ultra-Low Noise Single JFET Ultra-Low Noise at Both High & Low Frequencies With a Narrow Range of IDSS Absolute Maximum Ratings @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation @ +25°C Maximum Currents Gate Forward Current Maximum Voltages Gate to Source Gate to Drain -55 to +150°C -55 to +135°C 400mW IG(F) = 10mA VGSS = 40V VGDS = 40V TO-92 3L TOP VIEW 123 DSG SOT-23 3L TOSPOVTIE-2W3 TOP VIEW D1 S2 3G SOT-89 3L TOP VIEW G 123 SGD Features  ULTRA LOW NOISE (f =1khz): en = 0.9nV/√Hz  High Breakdown Voltage: BVGSS = 40V min  High Gain: Gfs = 22mS (typ)  High Input Impedance: 20GΩ typ  Low Capacitance: 22pF max  Improved Second Source Replacement for 2SK170  For Equivalent Monolithic-Dual, See the LSK389 Series Benefits  Direct Pin-For-Pin Replacement of Toshiba's 2SK170  Optimized to Provide Low Noise at Both High and Low Frequencies With a Narrow Range of IDSS and Low Capacitance  Low Noise to Capacitance Ratio and Narrow Range of Low Value IDSS Provide Solutions for Low Noise Applications Which Cannot Tolerate High Values of Capacitance or Wide Ranges of IDSS Applications  Audio Amplifiers and Preamps  Discrete Low-Noise Operational Amplifiers  Guitar Pickups  Effects Pedals  Microphones  Audio Mixer Consoles  Acoustic Sensors  Sonobouys  Hydrophones Applications Cont’d  Chemical and Rad...