(PDF) BD139 Datasheet PDF | ON Semiconductor





BD139 Datasheet PDF

Part Number BD139
Description NPN Epitaxial Silicon Transistor
Manufacture ON Semiconductor
Total Page 5 Pages
PDF Download Download BD139 Datasheet PDF

Features: Datasheet pdf BD135 / 137 / 139 — NPN Epitaxial Sili con Transistor BD135 / 137 / 139 NPN E pitaxial Silicon Transistor Features Complement to BD136, BD138 and BD140 respectively Applications • Medium P ower Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering In formation Part Number BD13516S BD1356ST U BD13510STU BD13516STU BD13716STU BD13 710STU BD13716S BD13916STU BD13910S BD1 3916S BD1396STU BD13910STU Marking BD1 35-16 BD135-6 BD135-10 BD135-16 BD137-1 6 BD137-10 BD137-16 BD139-16 BD139-10 B D139-16 BD139-6 BD139-10 Package TO-12 6 3L Packing Method Bulk Rail Bulk Rai l Bulk Rail © 2007 Semiconductor Comp onents Industries, LLC. November-2017, Rev. 2 Publication Order Number: BD139 /D BD135 / 137 / 139 — Features Abs olute Maximum Ratings Stresses exceedi ng the absolute maximum ratings may dam age the device. The device may not func tion or be opera- ble above the recomm ended operating conditions and stressin g the parts to these levels is not recommended. In addi- tion, extended.

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BD139 datasheet
BD135 / 137 / 139
NPN Epitaxial Silicon Transistor
Features
• Complement to BD136, BD138 and BD140 respectively
Applications
Medium Power Linear and Switching
1 TO-126
1. Emitter 2.Collector 3.Base
Ordering Information
Part Number
BD13516S
BD1356STU
BD13510STU
BD13516STU
BD13716STU
BD13710STU
BD13716S
BD13916STU
BD13910S
BD13916S
BD1396STU
BD13910STU
Marking
BD135-16
BD135-6
BD135-10
BD135-16
BD137-16
BD137-10
BD137-16
BD139-16
BD139-10
BD139-16
BD139-6
BD139-10
Package
TO-126 3L
Packing Method
Bulk
Rail
Bulk
Rail
Bulk
Rail
© 2007 Semiconductor Components Industries, LLC.
November-2017, Rev. 2
Publication Order Number:
BD139/D

BD139 datasheet
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
BD135
45
VCBO Collector-Base Voltage
BD137
BD139
60 V
80
VCEO Collector-Emitter Voltage
BD135
BD137
45
60 V
BD139
80
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Device Dissipation
Junction Temperature
Storage Temperature
TC = 25°C
TA = 25°C
5
1.5
3.0
0.5
12.5
1.25
150
- 55 to +150
V
A
A
A
W
W
°C
°C
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCEO(sus)
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(on)
Collector-Emitter Sustaining
Voltage
Collector Cut-off Current
Emitter Cut-off Current
BD135
BD137
BD139
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Test Condition
IC = 30 mA, IB = 0
VCB = 30 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 5 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 150 mA
IC = 500 mA, IB = 50 mA
VCE = 2 V, IC = 0.5 A
Min.
45
60
80
25
25
40
Typ.
Max.
0.1
10
250
0.5
1
Units
V
μA
μA
V
V
hFE Classification
Classification
hFE3
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
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