Phototransistor Optocoupler. CT817 Datasheet

CT817 Optocoupler. Datasheet pdf. Equivalent


CT Micro CT817
CT817 Series
DC Input 4-Pin Phototransistor Optocoupler
Features
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
External Creepage ≥ 7.4mm
Distance Through Isolation 0.4mm
Spatial Distance 7.5mm (S/SL Type)
Spatial Distance 8.0mm (M/SLM Type)
Operating Temperature range - 55 °C to 110 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC GB4943.1, GB8898
IEC60065, IEC60950
Description
The CT817 series consists of a photo transistor
optically coupled to a gallium arsenide Infrared-
emitting diode in a 4-lead DIP package different lead
forming options.
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
Note: Different lead forming options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Rev 6
Apr, 2020


CT817 Datasheet
Recommendation CT817 Datasheet
Part CT817
Description Phototransistor Optocoupler
Feature CT817; CT817 Series DC Input 4-Pin Phototransistor Optocoupler Features  High isolation 5000 VRMS  CTR f.
Manufacture CT Micro
Datasheet
Download CT817 Datasheet




CT Micro CT817
CT817 Series
DC Input 4-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage (AC, 1 minute)
PTOT Total power dissipation
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF
IF(TRANS)
Forward current
Peak transient current (≤1μs P.W,300pps)
VR Reverse voltage
PD Emitter power dissipation
RthJ-A Thermal Resistance Junction-Ambient
TJ Junction temperature
Detector
PD Detector power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
IC Collector Current
Ratings
5000
200
-55 ~ +110
-55 ~ +150
260
60
1
6
100
350
125
150
35
6
50
Units
VRMS
mW
oC
oC
oC
Notes
mA
A
V
mW
oC/W
oC
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev 6
Apr, 2020



CT Micro CT817
CT817 Series
DC Input 4-Pin Phototransistor Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
VF Forward voltage
IR Reverse Current
CIN Input Capacitance
Test Conditions
IF=10mA
VR = 6V
f= 1MHz
Min Typ Max Units Notes
- 1.24 1.4 V
- - 5 µA
- 10 30 pF
Detector Characteristics
Symbol
Parameters
BVCEO Collector-Emitter Breakdown
BVECO Emitter-Collector Breakdown
ICEO Collector-Emitter Dark Current
Test Conditions
IC= 100µA
IE= 100µA
VCE= 20V, IF=0mA
Min Typ Max Units Notes
35 -
-V
6- -V
- - 100 nA
Transfer Characteristics
Symbol
Parameters
CT817
CTR
Current Transfer
Ratio
CT817A
CT817B
CT817C
CT817D
VCE(SAT)
Collector-Emitter Saturation
Voltage
RIO Isolation Resistance
CIO Isolation Capacitance
Test Conditions
IF= 5mA, VCE= 5V
IF= 20mA, IC= 1mA
VIO= 500VDC
f= 1MHz
Min Typ
50 -
80 -
130 -
200 -
300 -
- 0.1
5x1010
-
-
0.25
Max
600
160
260
400
600
Units Notes
%
0.2 V
-
1 pF
Switching Characteristics
Symbol
Parameters
tr Rise Time
tf Fall Time
Test Conditions
IC= 2mA, VCE= 2V
RL= 100
Min Typ Max Units Notes
- 6 18
µs
- 8 18
CT Micro
Proprietary & Confidential
Page 3
Rev 6
Apr, 2020







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