DMTH6016LFDFWQ

ADVANCED INFORMATION DMTH6016LFDFWQ 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 18mΩ @ VGS = 10V 27.5mΩ @ VGS = 4.5V ID Max TA = +25°C 9.4A 7.6A Features Rated to +175°C—Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching (UIS) Test in Production: Ensures More Reliable and Robust End Application Low RDS(ON)—Ensures On-State Losses Are Minimized 0.6mm Profile—Ideal for Low-Profile Applications PCB Footprint of 4mm2 Sidewall Plated for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. “Green” Device (Note 3) The DMTH6016LFDFWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Description This MOSFET is designed to meet the stringent requirements of automotive applications. The device is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: Power Management Functions DC-DC Converters Backlighting Mechanical Data Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish—Matte Tin Annealed over Copper Lead- Frame; Solderable per MIL-STD-202, Method 208 Weight: 0.007 grams (Approximate) U-DFN2020-6 (SW...