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SS2FL4
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
eSMP® Series
Top view
Bottom view
SMF (DO-219AB)
Cathode
Anode
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
2.0 A 40 V 50 A
VF at IF = 2.0 A (TA = 125 °C)
0.43 V
TJ max. Package
150 °C SMF (DO-219AB)
Circuit configuration
Single
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Low forward voltage drop, low power losses
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Wave and reflow solderable
• AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications.
MECHANICAL DATA
Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Non-repetitive peak forward surge current 8.3 ms single half sine-wave at TJ (init) = 25 °C Operating junction and storage temperature range
VRRM IF(AV) (1)
IFSM TJ, TSTG
Note (1) Free air, mounted on recommended copper pad area
SS2FL4 2L4 40 2.0
50
-55 to +150
UNIT
V A A °C
Revision: 09-Aug-2018
1 Document Number: 87617
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SS2FL4
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 1.0 A IF = 2.0 A IF = 1.0 A IF = 2.0 A
Reverse current
VR = 40 V
TA = 25 °C
TA = 125 °C TA = 25 °C TA = 125 °C
VF (1) IR (2)
0.43 0.50 0.33 0.43
8
Typical junction capacitance 4.0 V, 1 MHz
Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms
CJ 125
MAX. -
0.58 -
0.51 220 14
-
UNIT
V
μA mA pF
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL
SS2FL4
Typical thermal resistance
RJA (1)(2)(3) RJM (2)(3)
125 21
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Device mounted on FR4 PCB, 2 oz. standard footprint (3) Thermal resistance RJA - junction to ambient; RJM - junction to mount
UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
SS2FL4-M3/H
0.015
H
3000
7" diameter plastic tape and reel
SS2FL4-M3/I SS2FL4HM3/H (1) SS2FL4HM3/I (1)
0.015 0.015 0.015
I
10 000
13" diameter plastic tape and reel
H
3000
7" diameter plastic tape and reel
I
10 000
13" diameter plastic tape and reel
Note (1) AEC-Q101 qualified
Revision: 09-Aug-2018
2 Document Number: 87617
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SS2FL4
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
Average Forward Rectified Current (A)
2.4 2.0 RthJM = 21ƱC/W
1.6 RthJA = 125 ƱC/W
1.2
0.8
0.4 Mounted on recommended areas, FR4 PCB; typical values
0.0 0 25 50 75 100 125 150
Mount Temperature (°C) Fig. 1 - Typical Forward Current Derating Curve
Instantaneous Reverse Current (μA)
100 000 10 000
TJ = 150 °C
1000 100
TJ = 125 °C
TJ = 100 °C
10
1 TJ = 25 °C
0.1 0.01
TJ = -40 °C
0.001 10 15 20 25 30 35 40
Reverse Voltage (V) Fig. 4 - Typical Reverse Leakage Characteristics
Average Power Loss (W)
1.6 D = 0.8
1.4 D = 0.5 1.2 D = 0.3
1.0 D = 0.2
D = 1.0
0.8 D = 0.1
0.6
T
0.4
0.2
0.0 0
0.4 0.8 1.2 1.6
D = tp/T
tp
2 2.4 2.8
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Junction Capacitance (pF)
1000 100
TJ = 25 °C f = 1.0 MHz
Vsig = 50 mVp-p
10 0
5 10 15 20 25 30 35
Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance
40
Instantaneous Forward Current (A)
10
TJ = 150 °C.