1N19

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 1N17 THRU 1N19 1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts High Current Capability Low Power loss High Efficiency Low Forward Voltage Drop Metal Silicon junction, majority carrier conduction Maximum Ratings Operating Temperature: -55°C to +125°C Storage Temperature: -55°C to +125°C Typical Thermal Resistance: 50oC/W junction to Ambient For capacitive load. Derate current by 20% Maximum Recurrent Peak Reverse Voltage 20V 30V 40V Maximum DC Blocking Voltage 20V 30V 40V D R-1 MCC Part Number 1N17 1N18 1N19 Maximum RMS Voltage 14V 21V 28V A Cathode Mark Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Rectified Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage 1N17 1N18 1N19 Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance I(AV) IFSM 1.0A 25A TA = 90°C 8.3ms, half sine D B VF C 0.45V 0.55V 0.60V 0.5mA 10mA 110pF IFM = 1.0A; TC = 25°C DIMENSIONS IR TC = 25°C TC = 100°C Measured at 1.0MHz, VR=4.0V INCHES DIM MIN A B C D 0.116 0.091 0.020 0.787 MAX 0.140 0.102 0.024 ----MIN 2.90 2.30 0.50 20.00 MM NOTE MAX 3.50 2.60 0.60 ----- CJ Note: 300 us pulse width, 1% duty cycle www.mccsemi.com 1N17 thru 1N19 MCC FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 
 TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) FIG.1-F...