1N23WE

1N23WE SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES: High burnout resistance Low noise figure Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20 mA 1.0 V 5.0 (ERGS) @ TC = 25 C -55 C to +150 C -55 C to +150 C O O O NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 C O TEST CONDITIONS F = 9375 MHz RL = 100 Ω Plo = 1.0 mW IF = 30 MHz NFif = 1.5 dB MINIMUM TYPICAL MAXIM 7.5 1.3 UNITS dB f = 1000 Hz 335 8.0 465 12.4 Ω GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...