n-channel JFET. 2N4085 Datasheet

2N4085 JFET. Datasheet pdf. Equivalent

Part 2N4085
Description monolithic dual n-channel JFET
Feature monolithic dual n-channel JFETs designed for • • • • DiHerential Amplifiers H Siliconix Performance.
Manufacture Siliconix
Datasheet
Download 2N4085 Datasheet



2N4085
monolithic dual
n-channel JFETs
designed for • •
DiHerential Amplifiers
H
Siliconix
Performance Curves NNR
See Section 4
BENEFITS
Minimum System Error and Calibra-
tion
5 mV Offset Maximum (2N3921)
Simplifies Amplifier Design
Low Output Conductance
TO-71
See Section 6
*ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ..............• -50 V
Gate Current ............................... 50 rnA
Total Device Dissipation
(Derate 1.7 mW;oC to 200°C) ..•............ 300mW
Storage Temperature Range •............. -65 to +200°C
~~G1 G2
81 S2
o'2 02
.,5 0
G, 0 3 6 0
27
0, 00'
G2
Bottom View
l~G.0, '•
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
.2.
~2 s
4"T
-::-A
~:
-"b -c
...l...
8
IGSS
BVOGO
VGS(offl
VGS
IG
lOSS
9 9fs
100 gos
12":l1 V CISS
Crss
13M 9fs
1_4c1 gos
15 NF
Gate Reverse Current
Drain-Gate Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-5ource Voltage
Gate Operatmg Current
Saturation Drain Current (Note 1)
Common-Source Forward Transconductance (Note 1)
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Common-Source Forward Transconductance
Common-Source Output Conductance
Spot NOise Figure
Min
50
-0.2
1
1500
1500
Max
-1
-1
-3
-2.7
-250
-25
10
7500
35
18
6
20
2
Unit Test Conditions
nA
IVGS=-30V. VOS=O
IlA
100·C
10 = lilA. IS = 0
V VOS-l0V.10-lnA
VOS - 10V,I0 = lOOIlA
pA
VOG = 10V,I0 = 700ilA
nA 100·C
mA VOS = 10V, VGS = 0
"mho
pF
VOS=10V,VGS=1J
1= I kHz
Ilmho VOG = 10V.10 = 700llA 1 = 1 kHz
d8 VOS=10V,VGS 0
f= 1 kHz,
RG= 1 meg
Characteristic
-16
1- M
17 A
1-
T
C
18 H
IVGS1-VGS2 1' Differential Gate-Source Voltage
aIVGS1-VGS2 1 Gate-Source Differential Voltage
aT
Change with Temperature
(Note 21
91,1 Transconductance Ratio
gfs2 (Note 3)
2N3921
Min Max
5
10
0.95 1.0
2N3922
Min Max
5
25
0.95 1.0
2N4OB4
Min Max
15
10
0.95 1.0
2N4085
Min Max
15
Unit
mV
25 "vfc
0.95 1.0
-
Test Conditions
VOG=10V, TA= O·C
10 = 700llA TB = 100·C
f = I kHz
•JEOEC registered data.
NOTES:
1. Pulse test duration = 2 ms.
2. Measured at end points, TA and TB.
3. Assumes smaller value 10 numerator.
NNR
3-4 Siliconix





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