n-channel JFET. 2N3955 Datasheet

2N3955 JFET. Datasheet pdf. Equivalent

Part 2N3955
Description monolithic dual n-channel JFET
Feature monolithic dual n-channel JFETs designed for • • • • Low and Medium Frequency Differential Amplifier.
Manufacture Siliconix
Total Page 1 Pages
Datasheet
Download 2N3955 Datasheet



2N3955
monolithic dual
n-channel JFETs
designed for • •
Low and Medium Frequency
Differential Amplifiers
High Input
Impedance Amplifiers
ABSOLUTE MAXIMUM RATINGS (25°C)
Any Case-To-Lead Voltage...•.....•• " .•...•.. ±100 V
Gate-Drain or Gate-Source Voltage •••••..•...••.• -50 V
Gate Current. . . • . • . • . . • • . • • • • • • • • • . • . . . . . .• 50 mA
Total Device Dissipation at (Each Side) ..••.........250 mW
85°C Case Temperature (Both Sides) ............ 500 mW
Power Derating (Each Side) •••••.•...••••• 2.86 mWrC
(Both Sides) ••••.•••..••••• 4.3 mWrC
Storage Temperature Range •••••..••.••• -65 to+200oC
Lead Temperature (1/16" from case for 10 seconds) ••• 300°C
H
Siliconix
Performance Curves NQP
See Section 4
BENEFITS
High Accuracy & Stability
Offset Less Than 5 mV (2N3954, 54A)
Drift Less Than 5 fJ.VrC (2N3954A)
Wide Dynamic Range
=IG Specified @ V DS 20 V
Low Capacitance
Ciss <4 pF
TO·71
See Section 6
~~G, G2
8, 82
'2
G' 30 0 506 °2
0,20 ,0 07 02
5,
Bottom View
G~ [
0, '1
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
CharacterIStic
1
12-'
IGSS
3 BVGSS
1-
4
I-
5
IS
s
T
A
T
I
VGS(olll
VGS(II
17" C VGS
IS
l"i IG
1-
10 lOSS
1-+1- gls
IE.
13
0
y
gas
1- N
14 A CISS
I-M
15 I Crss
-c
-16 Cdgo
17 NF
Gate Reverse Current
Gate·Source Breakdown
Voltage
Gate-Source Cutoff
Voltage
Gate-Source Forward
Voltage
Gate-Source Voltage
Gate Operating Current
Saturation Dram
Current
Common-Source Forward
Transconductance
Common-Source Output
Conductance
Common-Source Input
Capacitance
Common-Source Reverse
Transfer Capacitance
Drain-Gate Capacitance
Common Source Spot
NOise Figure
18 IIG1- IG21
1- M
19 A IOSS1/10SS2
-T
20 C
_H
IVGS1-VGS21
Differential Gate
Current
Saturation Dram Current
Rat'o (Note 11
Differential Gate-Source
Voltage
21 I
2_2G"N
t.IVGS1-VGS21
Gate-Source Differential
Voltage Change with
Temperature
23 !lisl/9Is2
Transconductance RatiO
(Note II
2N3954
Min Max
-100
-600
-50
-10 -4.5
2.0
-42
-05 -4.0
-50
-250
05 50
1000 3000
1000
35
40
12
1.5
05
10
0.95 1.0
50
08
1.0
097 10
2N3954A
M,n Max
-100
-500
-50
-1.0 -4.5
20
-4.2
-05 -40
-50
-250
05 50
1000 3000
1000
35
40
12
1.5
0.5
10
095 1.0
5.0
0.4
0.5
097 10
2N3955
Min Max
-100
-500
-50
-1.0 -45
20
-42
-0.5 -40
-50
-250
05 50
1000 3000
1000
35
4.0
12
1.5
05
10
0.95 1.0
10.0
2.0
2.5
097 1.0
2N3955A
Min Max
-100
-500
-50
-1.0 -45
20
-4.2
0.5 -40
-50
-250
05 5.0
1000 3000
1000
35
40
Unit
Test Conditions
pA VGS - -30 V,
nA VOS=O
VOS 0,
IG =-I)1A
VOS 20V,
V
10 =1nA
VOS= 0,
!G..= 1rnA
VOS=20V
pA VOS 20 V,
nA 10 =200)1A
rnA
VOS-20V,
VGS=O
.umho VOS=20V,
VGS=O
ITA-125C
10 50llA
10 200)1A
TA-125C
1 1kHz
1 200 MHz
1= 1kHz
1.2 pF
1.5
VOG 10V,
IS= 0
VOS 20V,
05 dB VGS =0,
RG =10 Mn
10
nA
VOS 20V,
10 =200)1A,
095
1.0
-
VOS - 20 V
VGS=O
5.0
1.2
mV
VOS~20V,
1.5 10=2001lA
1= 1MHz
1=100 Hz
T= 125°C
T = 25°C to -55°C
T-25 Cto 125 C
0.95 10 -
1= 1 kHz
IEII
*JEDEC registered data
NOTE:
1. Assumes smaller value in numerator.
NQP
Siliconix
3-5





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