2N3955

monolithic dual n-channel JFETs designed for Low and Medium Frequency Differential Amplifiers High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Any Case-To-Lead Voltage........ " ...... ±100 V Gate-Drain or Gate-Source Voltage ...... -50 V Gate Current. . . . . . . . . . . . . . . 50 mA Total Device Dissipation at (Each Side) ...........250 mW 85°C Case Temperature (Both Sides) ............ 500 mW Power Derating (Each Side) .... 2.86 mWrC (Both Sides) ... 4.3 mWrC Storage Temperature Range ... -65 to+200oC Lead Temperature (1/16" from case for 10 seconds) 300°C H Siliconix Performance Curves NQP See Section 4 BENEFITS High Accuracy & Stability Offset Less Than 5 mV (2N3954, 54A) Drift Less Than 5 fJ.VrC (2N3954A) Wide Dynamic Range =IG Specified @ V DS 20 V Low Capacitance Ciss <4 pF TO·71 See Section 6 ~~G, G2 8, 82 '2 G' 30 0 506 °2 0,20 ,0 07 02 5, Bottom View G~ [ 0, '1 *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) CharacterIStic 1 12-' IGSS 3 BVGSS 1- 4 I- 5 IS s T A T I VGS(olll VGS(II 17" C VGS IS l"i IG 1- 10 lOSS 1-+1- gls IE. 13 0 y gas 1- N 14 A CISS I-M 15 I Crss -c -16 Cdgo 17 NF Gate Reverse Current Gate·Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage Gate Operating Current Saturation Dram Current Common-Source Forward Transconductance Common-Source Output ...