2N3956

.monolithic dual n-channel JFETs H Siliconix Performance Curves NQP See Section 4 designed for Low and Medium Frequency DiHerential Amplifiers High Input Impedance Amplifiers *ABSOLUTE MAXIMUM RATINGS (25°C) BENEFITS Wide Dynamic Range IG Specified @ V DS = 20 V Low Capacitance Ciss <4 pF TO·71 Sea Section 6 Any Lead-To-Case Voltage .................... ±100 V Gate:Orail1 OJ Gate·~ource Voltage .............. -50 V Gate Current ............................. " 50 rnA Total Device Dissipation at (Each Side) .............250 mW 85°C Case Temperature (Both Sides) ............ 500 mW Power Derating (Each Side) ................ 2.86 mWrC (Both Sides) ............... 4.3 mWrC Storage Temperature Range .............. -65 to +250°C Lead Temperature (1/16" from case for 10seconds)... 300°C ~~G, G2 8, S2 Sz G, 30 0' Dz 06 20 07 G2 0, ,0 S, Bottom View *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) l 0, Gz " Characteristic 1 2--="3 45 _T 5A aT _I 7C 89 10 i~ I...E... 13 D I-V 14 N I-~ 15 I I-C 16 1- 17 IGSS BVGSS VGS(off) VGS(f) VGS IG lOSS IVI,I 9o, CISS Crss Cdgo NF Gate Reverse Current Gate-Source tsreakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage Gate Operating Current Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Drain-Gate Capacitance Common-Source Spot NOise Figure 18 ...