monolithic dual n-channel JFET
.monolithic dual
n-channel JFETs
H
Siliconix Performance Curves NQP See Section 4
designed for • • •
• Low and Medium ...
Description
.monolithic dual
n-channel JFETs
H
Siliconix Performance Curves NQP See Section 4
designed for
Low and Medium Frequency DiHerential Amplifiers
High Input Impedance Amplifiers
*ABSOLUTE MAXIMUM RATINGS (25°C)
BENEFITS
Wide Dynamic Range IG Specified @ V DS = 20 V
Low Capacitance Ciss <4 pF
TO·71 Sea Section 6
Any Lead-To-Case Voltage .................... ±100 V Gate:Orail1 OJ Gate·~ource Voltage .............. -50 V Gate Current ............................. " 50 rnA Total Device Dissipation at (Each Side) .............250 mW
85°C Case Temperature (Both Sides) ............ 500 mW
Power Derating (Each Side) ................ 2.86 mWrC (Both Sides) ............... 4.3 mWrC
Storage Temperature Range .............. -65 to +250°C Lead Temperature (1/16" from case for 10seconds)... 300°C
~~G, G2 8, S2
Sz
G,
30
0' Dz 06
20 07 G2 0, ,0
S,
Bottom View
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
l 0,
Gz
"
Characteristic
1
2--="3
45
_T 5A
aT _I
7C
89
10
i~
I...E...
13 D I-V
14 N
I-~
15 I I-C
16 1-
17
IGSS BVGSS VGS(off) VGS(f) VGS
IG lOSS IVI,I
9o, CISS Crss Cdgo NF
Gate Reverse Current
Gate-Source tsreakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage
Gate-Source Voltage
Gate Operating Current
Saturation Drain Current
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Drain-Gate Capacitance Common-Source Spot NOise Figure
18
...
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