n-channel JFET. 2N3958 Datasheet

2N3958 JFET. Datasheet pdf. Equivalent

Part 2N3958
Description monolithic dual n-channel JFET
Feature .monolithic dual n-channel JFETs H Siliconix Performance Curves NQP See Section 4 designed for • •.
Manufacture Siliconix
Total Page 1 Pages
Datasheet
Download 2N3958 Datasheet



2N3958
.monolithic dual
n-channel JFETs
H
Siliconix
Performance Curves NQP
See Section 4
designed for • •
Low and Medium Frequency
DiHerential Amplifiers
High Input Impedance Amplifiers
*ABSOLUTE MAXIMUM RATINGS (25°C)
BENEFITS
Wide Dynamic Range
IG Specified @ V DS = 20 V
Low Capacitance
Ciss <4 pF
TO·71
Sea Section 6
Any Lead-To-Case Voltage .................... ±100 V
Gate:Orail1 OJ Gate·~ource Voltage ............•.. -50 V
Gate Current ............................. " 50 rnA
Total Device Dissipation at (Each Side) .............250 mW
85°C Case Temperature (Both Sides) ............ 500 mW
Power Derating (Each Side) ................ 2.86 mWrC
(Both Sides) .........•...... 4.3 mWrC
Storage Temperature Range .............. -65 to +250°C
Lead Temperature (1/16" from case for 10seconds)... 300°C
~~G, G2
8, S2
Sz
G,
30
0' Dz
06
20 07 G2
0, ,0
S,
Bottom View
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
l 0,
Gz
"
Characteristic
1
2--="-
3
45
_T
5A
aT
_I
7C
8-
9
10
i~
I...E...
13 D
I-V
14 N
I-~
15 I
I-C
16
1-
17
IGSS
BVGSS
VGS(off)
VGS(f)
VGS
IG
lOSS
IVI,I
9o,
CISS
Crss
Cdgo
NF
Gate Reverse Current
Gate-Source tsreakdown
Voltage
Gate-Source Cutoff Voltage
Gate-Source Forward Voltage
Gate-Source Voltage
Gate Operating Current
Saturation Drain Current
Common-Source Forward
Transconductance
Common-Source Output
Conductance
Common-Source Input
Capacitance
Common-Source Reverse
Transfer Capacitance
Drain-Gate Capacitance
Common-Source Spot
NOise Figure
18
I- M
19 A
I-T
20
C
H
'211
1_ N
22 G
'23"
IiGJ-iG21
Differential Gate Reverse
Current
IOSS1/ IOSS2
Saturation Drain Current
Ratio (Note 1)
1IvGS1-V GS2
Differential Gate-Source
Voltage
Gate-Source Voltage
aIVGS1-VGS2 1 Differential Change With
Temperature
9f,l/91,2
Transconductance Ratio
(Note 1)
*JEDEC registered data
NOTE:
1. Assumes smaller value In numerator.
2N3956
Moo Max
-100
-500
-50
2N3957
Min Max
-100
-500
-50
-10 -4.5
2.0
-4.2
-0.5 -4.0
-50
-250
0.5 5.0
1000 3000
1000
-1.0 -4.5
2.0
-4.2
-0.5 -4.0
-50
-250
0.5 5.0
1000 3000
1000
35 35
4.0 40
1.2 1.2
1.5 1.5
0.5 0.5
10 10
0.95 1.0 0.90 1.0
15 20
4.0 6.0
5.0 7.5
0.95 10 0.90 1.0
2N3958
MIn Max
-100
-500
-50
Unit
pA
nA
Test Conditions
VGS=-30V, VDS=O
VDS=OV,IG=-l!,A
IT = 150'C
-1.0 -4.5
2.0
V
VOS=20V,IO= 1 nA
VOS =OV,IG = 1 rnA
-4.2 VOS=20V,10=50!,A
-0.5 -4.0
VOS= 20V,I0 = 200!,A
I-50 pA
VOS=20V,10=200!,A
,
-250 nA
T •. =125C
0.5 5.0 rnA VO'S = 20 V, VGS = 0
1000 3000
f= 1 kHz
1000
!,rnho
35
VDS = 20 V, VGS = 0
1= 200 MHz
1= 1 kHz
40
1.2 pF
1= 1 MHz
1.5
0.5 dB
VDG=10V,.IS=0
VOS = 20 V, VGS = OV,
RG = 10M!),
1=100Hz
10 nA VOS = 20 V, 10 = 200!,A T = 125'C
-0.85 1.0
VDS=20V, VGS=O
25
8.0
10.0
0.85 1.0
rnV
VDS = 20V,ID = 200!,A
T = 25'C to -55'C
T = 25'C to 125'C
1= 1 kHz
NQP
3-6 Silicanix





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