P-channel JFET. 2N5018 Datasheet

2N5018 JFET. Datasheet pdf. Equivalent

Part 2N5018
Description P-channel JFET
Feature 0- -oan p-channel JFETs Z C"'4 designed for • • • co - •oan Analog Switches Z •C"'4 Comm.
Manufacture Siliconix
Total Page 1 Pages
Datasheet
Download 2N5018 Datasheet



2N5018
0-
-oan
p-channel
JFETs
Z
C"'4
designed
for
co
- oan Analog Switches
Z
C"'4
Commutators
Choppers
~-~~---
H
Siliconix
Performance Curves PSA/PSB
See Section 4
BENEFITS
Low Insertion Loss
rOS(on) < 75 n (2N5018)
No Offset or Error Voltages Generated
by Closed Switch
Purely Resistive
*ABSOLUTE MAXIMUM RATINGS (25°C)
Reverse Gate-Drain or Gate-Source Voltage
(Note 1)
Gate Current
Total Device Dissipation, Free-Air
(Derate 3 mW;oC)
Storage Temperature Range
Lead Temperature
(1/16" from case for 60 seconds)
30V
.50mA
500mW
-65 to +200°C
300°C
TO-1B
See Section 6
.~:
o)c s
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
1
1-
2
I-
3
1-
4
1- S
5T
16
:_A
7T
I_I
8C
1-
9
BVGSS
IGSS
IDloff)
IDGO
VGSloff)
IDSS
VDSlon)
Characteristic
Gate-Source Breakdown Voltage
Gate Reverse Current
Drain Cutoff Current
Drain Reverse Current
Gate-Source Cutoff Voltage
SaturatIon Dram Current
Drain-Source ON Voltage
2N5018
Min Max
30
2
-10
-10
-2
-3
10
-10
-{).5
2N5019
Min Max
30
2
-10
-10
-2
-3
5
-5
-{).5
Unit
V
nA
)lA
nA
)lA
V
mA
V
Test Conditions
IG - 1 )lA, VOS - 0
VGS=15V,VOS=0
VDS = -15 V. VGS = 12 V 12N5018)
VGS = 7 V 12N5019)
VDG = -15 V. IS = 0
VDS =-15 V.ID =-l)lA
VDS =-20 V, VGS = 0
VGS = 0, ID = -6 mA 12N5018),
ID =-3 mA 12N5019)
150°C
150°C
10
I-
II
1-
12
0
y
I- N
13
'DSlon)
'dslon)
G1SS
Crss
Static Drain-Source ON
Resistance
Dram-Source ON Resistance
Common-Source Input
Capacitance
Common-Source Reverse
Transfer Capacitance
75
150 n
ID=-l mA,VGS=O
75
150 n
ID = 0, VGS = 0
f = 1 kHz
45 45 VDS=-15V,VGS=0
pF f = 1 MHz
VDS - 0, VGS - 12 V 12N5018),
10 10 VGS = 7 V 12N5019)
14
1-
15
S
W
I
1"16 T
1- c
17 H
'd(on)
"
'd(off)
'f
Turn-ON O~lay Time
Rise Time
Turn-OFF Delay Time
Fall Time
15 15 VDD = -6 V, VGS(on) = 0
20 75
ns
VGS(off) ID(on)
RL
15
25
2N5018
12 V
-6mA
910n
50
100
2N5019
7V -3mA 1.8K n
*JEDEC registered data
NOTE:
1. Due to symmetrical geometry these units may be operated with
source and dram leads Interchanged
".~
01 pF RG
PSA/PSB
VIN;;y'f-
15K
51n
12K _
~ f-sAMPLING
5H! SCOPE 5H!
~~
INPUT PULSE
SAMPLING SCOPE
RISE TIME < 1 ns
FALL TIME < 1 ns
RISE TIME 0 4 ns
INPUT RESISTANCE 10 Mrl
PULSE WIDTH 100 ns
INPUT CAPACITANCE 1 5 pF
REPETITION RATE 1 MHz
3-18 Siliconix





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