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2N5019 Dataheets PDF



Part Number 2N5019
Manufacturers Siliconix
Logo Siliconix
Description P-channel JFET
Datasheet 2N5019 Datasheet2N5019 Datasheet (PDF)

0- -oan p-channel JFETs Z C"'4 designed for • • • co - •oan Analog Switches Z •C"'4 Commutators • Choppers ~-~~--- H Siliconix Performance Curves PSA/PSB See Section 4 BENEFITS • Low Insertion Loss rOS(on) < 75 n (2N5018) • No Offset or Error Voltages Generated by Closed Switch Purely Resistive *ABSOLUTE MAXIMUM RATINGS (25°C) Reverse Gate-Drain or Gate-Source Voltage (Note 1) Gate Current Total Device Dissipation, Free-Air (Derate 3 mW;oC) Storage Temperature Range Lead Temperat.

  2N5019   2N5019


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0- -oan p-channel JFETs Z C"'4 designed for • • • co - •oan Analog Switches Z •C"'4 Commutators • Choppers ~-~~--- H Siliconix Performance Curves PSA/PSB See Section 4 BENEFITS • Low Insertion Loss rOS(on) < 75 n (2N5018) • No Offset or Error Voltages Generated by Closed Switch Purely Resistive *ABSOLUTE MAXIMUM RATINGS (25°C) Reverse Gate-Drain or Gate-Source Voltage (Note 1) Gate Current Total Device Dissipation, Free-Air (Derate 3 mW;oC) Storage Temperature Range Lead Temperature (1/16" from case for 60 seconds) 30V .50mA 500mW -65 to +200°C 300°C TO-1B See Section 6 .~: o)c s *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) 1 1- 2 I- 3 1- 4 1- S 5T 16 :_A 7T I_I 8C 1- 9 BVGSS IGSS IDloff) IDGO VGSloff) IDSS VDSlon) Characteristic Gate-Source Breakdown Voltage Gate Reverse Current Drain Cutoff Current Drain Reverse Current Gate-Source Cutoff Voltage SaturatIon Dram Current Drain-Source ON Voltage 2N5018 Min Max 30 2 -10 -10 -2 -3 10 -10 -{).5 2N5019 Min Max 30 2 -10 -10 -2 -3 5 -5 -{).5 Unit V nA )lA nA )lA V mA V Test Conditions IG - 1 )lA, VOS - 0 VGS=15V,VOS=0 VDS = -15 V. VGS = 12 V 12N5018) VGS = 7 V 12N5019) VDG = -15 V. IS = 0 VDS =-15 V.ID =-l)lA VDS =-20 V, VGS = 0 VGS = 0, ID = -6 mA 12N5018), ID =-3 mA 12N5019) 150°C 150°C 10 III 1- 12 0 y I- N 13 'DSlon) 'dslon) G1SS Crss Static Drain-Source ON Resistance Dram-Source ON Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance 75 150 n ID=-l mA,VGS=O 75 150 n ID = 0, VGS = 0 f = 1 kHz 45 45 VDS=-15V,VGS=0 pF f = 1 MHz VDS - 0, VGS - 12 V 12N5018), 10 10 VGS = 7 V 12N5019) 14 1- 15 S W I 1"16 T 1- c 17 H 'd(on) " 'd(off) 'f Turn-ON O~lay Time Rise Time Turn-OFF Delay Time Fall Time 15 15 VDD = -6 V, VGS(on) = 0 20 75 ns VGS(off) ID(on) RL 15 25 2N5018 12 V -6mA 910n 50 100 2N5019 7V -3mA 1.8K n *JEDEC registered data NOTE: 1. Due to symmetrical geometry these units may be operated with source and dram leads Interchanged ".~ 01 pF RG PSA/PSB VIN;;y'f- 15K 51n 12K _ ~ f-sAMPLING 5H! SCOPE 5H! ~~ INPUT PULSE SAMPLING SCOPE RISE TIME < 1 ns FALL TIME < 1 ns RISE TIME 0 4 ns INPUT RESISTANCE 10 Mrl PULSE WIDTH 100 ns INPUT CAPACITANCE 1 5 pF REPETITION RATE 1 MHz 3-18 Siliconix .


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