Document
0-
-oan
p-channel
JFETs
Z
C"'4
designed
for
•
•
•
co
- •oan Analog Switches
Z
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Commutators
• Choppers
~-~~---
H
Siliconix
Performance Curves PSA/PSB See Section 4
BENEFITS
• Low Insertion Loss
rOS(on) < 75 n (2N5018)
• No Offset or Error Voltages Generated by Closed Switch Purely Resistive
*ABSOLUTE MAXIMUM RATINGS (25°C)
Reverse Gate-Drain or Gate-Source Voltage (Note 1)
Gate Current Total Device Dissipation, Free-Air
(Derate 3 mW;oC) Storage Temperature Range Lead Temperature
(1/16" from case for 60 seconds)
30V .50mA
500mW -65 to +200°C
300°C
TO-1B See Section 6
.~:
o)c s
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
1
1-
2
I-
3 1-
4 1- S
5T 16 :_A
7T I_I
8C 1-
9
BVGSS IGSS IDloff)
IDGO VGSloff) IDSS VDSlon)
Characteristic Gate-Source Breakdown Voltage Gate Reverse Current Drain Cutoff Current
Drain Reverse Current Gate-Source Cutoff Voltage SaturatIon Dram Current Drain-Source ON Voltage
2N5018 Min Max
30 2
-10 -10
-2 -3 10 -10
-{).5
2N5019 Min Max 30
2 -10 -10
-2 -3
5 -5
-{).5
Unit V
nA
)lA nA )lA V mA
V
Test Conditions
IG - 1 )lA, VOS - 0 VGS=15V,VOS=0 VDS = -15 V. VGS = 12 V 12N5018) VGS = 7 V 12N5019)
VDG = -15 V. IS = 0
VDS =-15 V.ID =-l)lA VDS =-20 V, VGS = 0 VGS = 0, ID = -6 mA 12N5018), ID =-3 mA 12N5019)
150°C 150°C
10
III
1-
12
0 y
I- N
13
'DSlon) 'dslon) G1SS
Crss
Static Drain-Source ON Resistance
Dram-Source ON Resistance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
75
150 n
ID=-l mA,VGS=O
75
150 n
ID = 0, VGS = 0
f = 1 kHz
45 45 VDS=-15V,VGS=0
pF f = 1 MHz VDS - 0, VGS - 12 V 12N5018),
10 10 VGS = 7 V 12N5019)
14 1-
15
S W
I
1"16 T
1- c
17 H
'd(on)
"
'd(off)
'f
Turn-ON O~lay Time Rise Time Turn-OFF Delay Time Fall Time
15 15 VDD = -6 V, VGS(on) = 0
20 75 ns
VGS(off) ID(on)
RL
15
25
2N5018
12 V
-6mA
910n
50
100
2N5019
7V -3mA 1.8K n
*JEDEC registered data
NOTE: 1. Due to symmetrical geometry these units may be operated with
source and dram leads Interchanged
".~
01 pF RG
PSA/PSB
VIN;;y'f-
15K
51n
12K _
~ f-sAMPLING
5H! SCOPE 5H!
~~
INPUT PULSE
SAMPLING SCOPE
RISE TIME < 1 ns FALL TIME < 1 ns
RISE TIME 0 4 ns INPUT RESISTANCE 10 Mrl
PULSE WIDTH 100 ns
INPUT CAPACITANCE 1 5 pF
REPETITION RATE 1 MHz
3-18 Siliconix
.