2N5452

monolithic dual n-channel JFETs designed for H Siliconix Performance Curves NQP See Section 4 Low and Medium Frequency DiHerential Amplifiers BENEFITS Minimum System Error and Calibration *ABSOLUTE MAXIMUM RATINGS (25°C) Any Lead-To-Case Voltage _...... ±100 V Gate-Drain or Gate-Source Voltage ...... -50 V Gate Current ....... 50 rnA Total Device Dissipation at (Each Side) ............250 mW 85°C Case Temperature (Both Sides) ..........500 mW Power Derating (Each Side) . 2.86 mWrC (Both Sides) .. 4.3 mWrC 5 mV Offset Maximum (2N5452) Simplifies Amplifier Design Output Conductance Less that 1 J./mho TO·71 See Section 6 ~~G, G2 Storage Temperature Range ... -65 to +250°C 8, 82 Lead Temperature (1/16" from case for 10 seconds) . 300°C *ELECTRICAL CHARACTERISTICS (25a C unless otherwise noted) '2 G, 30 0506 D2 0, 20 10 01 G2 "Bottom View .~ , 02 G2 " Characteristic 2N5452 Min Max 12.. IGSS 1.3.. 3 1- S T A BVGSS 4 T VGS(of!l 15" It I~ I C VGS VGS(I) lOSS I9~ gl. 11't 1I;1';'"t 0 90S 12 y Ciss I- 13 N A M Crs, li4' 1- I C Cdgo 15 en 1- 16 NF Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Gate-Source Forward Voltage Drain Saturation Current Common-Source Forward Transconductance Common-Source Output Conductance Common.source Input Capacitance Common-Source Reverse Transfer Capacitance Drain-Gate...