n-channel JFET. 2N5452 Datasheet

2N5452 JFET. Datasheet pdf. Equivalent

Part 2N5452
Description monolithic dual n-channel JFET
Feature monolithic dual n-channel JFETs designed for • • • H Siliconix Performance Curves NQP See Section 4.
Manufacture Siliconix
Datasheet
Download 2N5452 Datasheet



2N5452
monolithic dual
n-channel JFETs
designed for
H
Siliconix
Performance Curves NQP
See Section 4
Low and Medium Frequency
DiHerential Amplifiers
BENEFITS
Minimum System Error and Calibra-
tion
*ABSOLUTE MAXIMUM RATINGS (25°C)
Any Lead-To-Case Voltage _••.•.••••••••••.... ±100 V
Gate-Drain or Gate-Source Voltage .•••.••....••• -50 V
Gate Current .••.••.••••••••••••••••••••.... 50 rnA
Total Device Dissipation at (Each Side) ............•250 mW
85°C Case Temperature (Both Sides) ....•..•....500 mW
Power Derating (Each Side) ••••••••••••.• 2.86 mWrC
(Both Sides) ••••.•••.•••••• 4.3 mWrC
5 mV Offset Maximum (2N5452)
Simplifies Amplifier Design
Output Conductance Less that
1 J./mho
TO·71
See Section 6
~~G, G2
Storage Temperature Range .•••••.•••••. -65 to +250°C
8, 82
Lead Temperature (1/16" from case for 10 seconds) ••. 300°C
*ELECTRICAL CHARACTERISTICS (25a C unless otherwise noted)
'2
G, 30 0506 D2
0,
20
10
01
G2
"Bottom View
.~ , 02 G2
"
Characteristic
2N5452
Min Max
12.. IGSS
1.3..
3
1-
S
T
A
BVGSS
4 T VGS(of!l
15"
It
I~
I
C
VGS
VGS(I)
lOSS
I9~ gl.
11't
1I;1';'"t 0 90S
12 y Ciss
I-
13
N
A
M
Crs,
li4'
1-
I
C
Cdgo
15 en
1-
16 NF
Gate Reverse Current
Gate-Source Breakdown
Voltage
Gate-Source Cutoff
Voltage
Gate-Source Voltage
Gate-Source Forward Voltage
Drain Saturation Current
Common-Source Forward
Transconductance
Common-Source Output
Conductance
Common.source Input
Capacitance
Common-Source Reverse
Transfer Capacitance
Drain-Gate Capacitance
EqUivalent Short Circuit
Input Noi.e Voltage
Common-Source Spot
NOise Figure
-100
-200
-50
-1 -4.5
-0.2 -4.2
2
0.5 5.0
1000 3000
1000
3.0
1.0
4.0
1.2
1.5
20
0.5
17
1-
IOSSI/IOSS2
Drain Saturation Current RatiO
(Note 11
0.95
1.0
lB
liB
1-
M
~
C
IVGS1-VGS2 1
Differential Gate-Source
Voltage
Gate-Source Voltage
<lIVGS1-VGS21 Differential Change With
I~ ~
Temperature
5.0
0.4
0.5
21
1_
N
G
9151/91.2
Transconductance Ratio
(Note 1)
0.97 1.0
22
190,1-g052I
Differential Output
Conductance
0.25
*JEDEC registered data
NOTE:
1. Assumes smaller value In numerator.
2N5453
Min Max
-100
-200
-50
-1 -4.5
-0.2 -4.2
2
0.5 5.0
1000 3000
1000
3.0
1.0
4.0
1.2
1.5
20
0.5
0.95 1.0
10.0
0.8
1.0
0.97 1.0
0.25
2N5454
Min Max Umt
Test Conditions
-100 pA
-200 nA
VGS=-30V, VOS=OV
I•
ITA=150C
-50 VOS= 0V,IG =-IIlA
-1 -4.5 V VOS =20 V, 10 =1nA
-0.2 -4.2
VOS =20V,Io =50llA
2 VOS=OV,IG=lmA
0.5 S.O mA VOS =20V, VGS =OV
1000 3000
1000 3.0 Ilmho VOS= 20V, VGS =0V
1.0 VOS - 20 V,IO =200llA
4.0
1.2 pF VOS =20V, VGS =OV
1.5
20
!!Y.
VHz
0.5 dB
VOG =10V,IS=OV
VOS =20V, VGS =0V
VDS=20V,VGS=OV,
RG =10M!2
0.95 1.0 - VOS =20V, VGS= OV
1=1kHz
1= 100 MHz
1= 1kHz
1= 1MHz
1= 1kHz
1=100Hz
15.0
2.0 mV
T =25·C to -55·C
2.5 VOS =20 V,IO =200llA T=25·C to +125·C
0.95 1.0 -
0.25 #Jmhos
1= 1kHz
NQP
-
Silicanix
3-23





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