BARRIER RECTIFIERS. MBR1050 Datasheet

MBR1050 RECTIFIERS. Datasheet pdf. Equivalent

Part MBR1050
Description SCHOTTKY BARRIER RECTIFIERS
Feature LITE-ON SEMICONDUCTOR SCHOTTKY BARRIER RECTIFIERS MBR1030 thru 1060 REVERSE VOLTAGE - 30 to 60 Volt.
Manufacture LITE-ON
Datasheet
Download MBR1050 Datasheet



MBR1050
LITE-ON
SEMICONDUCTOR
SCHOTTKY BARRIER RECTIFIERS
MBR1030 thru 1060
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 10 Amperes
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
B
C
K
PIN
12
I
H
PIN 1
PIN 2
TO-220AC
L
M
TO-220AC
DIM. MIN. MAX.
D A 14.22 15.88
A B 9.65 10.67
E C 2.54 3.43
D 5.84 6.86
E 8.26 9.28
F F - 6.35
G 12.70 14.73
G H 4.83 5.33
J I 0.51 1.14
J 0.30 0.64
N K 3.53 4.09
L 3.56 4.83
M 1.14 1.40
CASE
N 2.03 2.92
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
CHARACTERISTICS
SYMBOL MBR1030 MBR1035 MBR1040 MBR1045 MBR1050 MBR1060 UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
@TC=125 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
I(AV)
IFSM
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage
@ IF =20A
@ IF =10A
TJ =25 C
TJ =125 C
dv/dt
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
IR
30
21
30
35 40 45
24.5
28 31.5
35 40 45
10
150
10000
0.84
0.57
0.02
15
50 60
35 42
50 60
0.95
0.70
25
V
V
V
A
A
V/us
V
mA
Typical Thermal Resistance (Note 1)
R0JC
2.5 C/W
Typical Junction Capacitance (Note 2)
CJ
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
NOTES : 1.Thermal Resistance Junction to Case.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
400
-55 to +150
-55 to +175
pF
C
C
REV. 6, Apr-2011, KTHA08



MBR1050
RATING AND CHARACTERISTIC CURVES
MBR1030 thru MBR1060
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
6
4
2
RESISTIVE OR
INDUCTIVE LOAD
0
25 50 75 100 125
CASE TEMPERATURE , C
150 175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
0
12
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
TJ = 100 C
1.0
TJ = 75 C
0.1
MBR1030 ~ MBR1045
10
1.0
MBR1050 ~ MBR1060
0.01
TJ = 25 C
0.001
0 20 40 60 80 100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
140
TJ = 25 C
PULSE WIDTH 300us
0.1 2% Duty cycle
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)
10000
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25 C, f= 1MHz
100
0.1
1 4 10
REVERSE VOLTAGE , VOLTS
100





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