SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY
TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APR...
Description
TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
D Organization
1048576 by 8 Bits by 2 Banks
D 3.3-V Power Supply (± 10% Tolerance) D Two Banks for On-Chip Interleaving
(Gapless Accesses)
D High Bandwidth – Up to 125-MHz Data
Rates
D CAS Latency (CL) Programmable to
2 or 3 Cycles From Column-Address Entry
D Burst Sequence Programmable to Serial or
Interleave
D Burst Length Programmable to 1, 2, 4, or 8 D Chip Select and Clock Enable for Enhanced
System Interfacing
D Cycle-by-Cycle DQ Bus Mask Capability D Auto-Refresh and Self-Refresh Capabilities D 4K Refresh (Total for Both Banks) D High-Speed, Low-Noise, Low-Voltage TTL
(LVTTL) Interface
D Power-Down Mode D Compatible With JEDEC Standards D Pipeline Architecture D Temperature Ranges
Operating, 0°C to 70°C
Storage, – 55°C to 150°C
D Intel PC100 Compliant (-8A, -8, and
-10 Devices)
D Performance Ranges:
’626812B-8 ’626812B-8A ’626812B-10
SYNCHRONOUS CLOCK
CYCLE TIME
tCK3
tCK2
(CL† = 3) (CL = 2)
8 ns 10 ns
8 ns 15 ns
10 ns
15 ns
ACCESS TIME (CLOCK TO OUTPUT)
tAC3
tAC2
(CL = 3) (CL = 2)
6 ns 6 ns 7.5 ns
6 ns 7 ns 7.5 ns
REFRESH TIME
INTERVAL
64 ms 64 ms 64 ms
† CL = CAS latency
TMS626812B DGE PACKAGE
( TOP VIEW )
VCC DQ0 VSSQ DQ1 VCCQ DQ2 VSSQ DQ3 VCCQ
NC NC
W CAS RAS
CS A11 A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 VSS 43 DQ7 42 VSSQ 41 DQ6 40 VCCQ 39 DQ5 38 VSSQ 37 DQ4 36 VCCQ 35 NC 34 N...
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