DMOS Array. TPIC1310 Datasheet

TPIC1310 Array. Datasheet pdf. Equivalent

Part TPIC1310
Description 3-Half H-Bridge Gate-Protected Power DMOS Array
Feature D Configured for 3-Phase Brushless Motor Drive D Low rDS(on) . . . 0.25 Ω Typ D High Voltage Output .
Manufacture etcTI
Datasheet
Download TPIC1310 Datasheet



TPIC1310
D Configured for 3-Phase Brushless Motor
Drive
D Low rDS(on) . . . 0.25 Typ
D High Voltage Output . . . 30 V
D Pulsed Current . . . 12 A Per Channel
D Input Transient and ESD Protection
D Compatible With High-Side and Low-Side
Current Sense Resistors
description
The TPIC1310 is a monolithic gate-protected
power DMOS array that consists of six electrically
isolated N-channel enhancement-mode DMOS
transistors configured as a three-half H-bridge.
When suitably heat sunk, the TPIC1310 can drive
motors requiring 2.5 A of phase current. The
DMOS transistors are immune to second break-
down effects and current crowding, problems
often associated with bipolar transistors.
The TPIC1310 is offered in 15-pin through-hole
(KTS) and surface-mount (KTR) PowerFLEX
packages and is characterized for operation over
the case temperature range of – 40°C to 125°C.
schematic
VDD
1, 15
TPIC1310
3-HALF H-BRIDGE GATE PROTECTED
POWER DMOS ARRAY
SLIS071 – DECEMBER 1997
KTR or KTS PACKAGE
(TOP VIEW)
VDD
OUTA
UGA
LGA
UGB
SUB/GND
SOURCE
OUTB
SOURCE
SUB/GND
LGB
LGC
UGC
OUTC
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Tab is SUB/GND
KTR PACKAGE
KTS PACKAGE
Q1
UGA
3
2
OUTA
Q2
UGB
5
8
OUTB
Q3
UG
C 13
14
OUTC
Q4
LGA
4
Q5
LGB
11
Q6
LGC
12
13 k 13 k 13 k 6, 10
SUB/TAB/GND
7, 9
SOURCE
NOTES: A. Terminals 1 and 15 must be externally connected.
B. Terminals 6 and 10 must be connected to GND.
C. Terminals 7 and 9 must be connected to the sense resistor or GND.
D. No terminal may be taken greater than 0.5 V below GND.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerFLEX is a trademark of Texas Instruments Inc.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
1



TPIC1310
TPIC1310
3-HALF H-BRIDGE GATE PROTECTED
POWER DMOS ARRAY
SLIS071 – DECEMBER 1997
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Output-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
SOURCE-to-SUB/GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 20 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 20 V
Continuous output current, each output, all outputs on, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Pulsed output current, each output, Imax, TC = 25°C (see Note 1 and Figure 14) . . . . . . . . . . . . . . . . . . . 12 A
Continuous VDD and SOURCE current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Pulsed VDD and SOURCE current, TC = 25°C (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 A
Continuous total dissipation, TC = 25°C (see Note 2 and Figure 14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions is not implied. Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability.
NOTES: 1. Pulse duration = 10 µs, duty cycle 2%
2. Package is mounted in intimate contact with an infinite heat sink.
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265





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