DMOS Array. TPIC1321L Datasheet

TPIC1321L Array. Datasheet pdf. Equivalent

Part TPIC1321L
Description 3-Half H-Bridge Gate-Protected Logic-Level Power DMOS Array
Feature .
Manufacture etcTI
Datasheet
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TPIC1321L
ą TPIC1321L
3ĆHALF HĆBRIDGE GATEĆPROTECTED LOGICĆLEVEL
POWER DMOS ARRAY
SLIS042 − NOVEMBER 1994
Low rDS(on) . . . 0.35 Typ
Voltage Output . . . 60 V
DW PACKAGE
(TOP VIEW)
Input Protection Circuitry . . . 18 V
OUTPUT1 1
24 OUTPUT1
Pulsed Current . . . 4 A Per Channel
Extended ESD Capability . . . 4000 V
Direct Logic-Level Interface
GATE4
SOURCE4
SOURCE4
GND
2
3
4
5
23 GATE1
22 DRAIN1
21 DRAIN1
20 DRAIN2
description
GND 6
GATE5 7
19 DRAIN2
18 OUTPUT2
The TPIC1321L is a monolithic gate-protected
SOURCE6 8
17 OUTPUT2
logic-level power DMOS array that consists of six
SOURCE6 9
16 GATE2
electrically isolated N-channel enhancement-
GATE6 10 15 DRAIN3
mode DMOS transistors configured as 3-half
OUTPUT3 11 14 DRAIN3
H-bridges. Each transistor features integrated
OUTPUT3 12 13 GATE3
high-current zener diodes (ZCXa and ZCXb) to
prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to
4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series with a 1.5-k
resistor.
The TPIC1321L is offered in a 24-pin wide-body surface-mount (DW) package and is characterized for
operation over the case temperature of − 40°C to 125°C.
schematic
21, 22
DRAIN1
23
GATE1
ZC1b
ZC1a
1, 24
OUTPUT1
Q1
OUTPUT2
17, 18
GATE5 GATE2
7 16
DRAIN2
19, 20
Z1
D1
D4
Q2
ZC2b
ZC2a
Z2 Z3
D2
D3
D5
14, 15
DRAIN3
Q3
13
GATE3
ZC3b
ZC3a
11, 12
OUTPUT3
Q4 Q5
2
GATE4
ZC4b
Z4
ZC5b
Z5
ZC4a
SOURCE4 3, 4
ZC5a
5, 6
GND
NOTE A: For correct operation, no terminal may be taken below GND.
Q6
Z6
10
GATE6
ZC6b
ZC6a
8, 9 SOURCE6
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1994, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
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TPIC1321L
TPIC1321L
3ĆHALF HĆBRIDGE GATEĆPROTECTED LOGICĆLEVEL
POWER DMOS ARRAY
SLIS042 − NOVEMBER 1994
ą
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Output-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
SOURCE4, SOURCE6-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −9 V to 18 V
Continuous drain current, each output, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25 A
Continuous source-to-drain diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25 A
Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . 4 A
Continuous gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Pulsed gate-to-source zener-diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 500 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4 and 16) . . . . . . . . . . . . . . . . . . . . . . . . . 96 mJ
Continuous total dissipation, TC = 25°C (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443





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