DMOS ARRAY. TPIC2301 Datasheet

TPIC2301 ARRAY. Datasheet pdf. Equivalent

Part TPIC2301
Description 3-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
Feature TPIC2301 3-CHANNEL COMMON-SOURCE POWER DMOS ARRAY D Three 7.5-A Independent Output Channels, Contin.
Manufacture etcTI
Total Page 9 Pages
Datasheet
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TPIC2301
TPIC2301
3-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
D Three 7.5-A Independent Output Channels,
Continuous Current Per Channel
D Low rDS(on) . . . 0.09 Typical
D Output Voltage . . . 60 V
D Pulsed Current . . . 15 A Per Channel
D Avalanche Energy . . . 120 mJ
description
The TPIC2301 is a monolithic power DMOS array
that consists of three independent N-channel
enhancement-mode DMOS transistors con-
nected in a common-source configuration with
open drains.
SLIS018 – SEPTMEBER 1992
KV PACKAGE
(TOP VIEW)
7 DRAIN3
6 GATE3
5 DRAIN2
4
3
2
1
SOURCE
GATE2
DRAIN1
GATE1
schematic
DRAIN1
2
GATE2
GATE3
DRAIN2
35
DRAIN3
67
The tab is electrically connected to SOURCE.
GATE1
1
4
SOURCE
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous source-drain diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 A
Pulsed drain current, each output, all outputs on, ID (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 A
Continuous drain current, each output, all outputs on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 A
Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 mJ
Continuous power dissipation at (or below) TA = 25°C (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 W
Continuous power dissipation at (or below) TC = 75°C, all outputs on (see Note 2) . . . . . . . . . . . . . . . . 50 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
NOTES:
1. Pulse duration = 10 ms, duty cycle = 6%
2. For operation above 25°C free-air temperature, derate linearly at the rate of 16 mW/°C. For operation above 75°C case temperature,
and with all outputs conducting, derate linearly at the rate of 0.66 W/°C. To avoid exceeding the design maximum virtual junction
temperature, these ratings should not be exceeded.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1992, Texas Instruments Incorporated
1



TPIC2301
TPIC2301
3-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS018 – SEPTMEBER 1992
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
V(BR)DS Drain-source breakdown voltage
VTGS Gate-source threshold voltage
VDS(on) Drain-source on-state voltage
IDSS Zero-gate-voltage drain current
IGSSF
Forward gate current, drain short
circuited to source
ID = 1 µA,
ID = 1 mA,
ID = 7.5 A,
VDS = 48 V,
VGS = 20 V,
VGS = 0
VDS = VGS
VGS = 15 V,
VGS = 0
VDS = 0
See Notes 3 and 4
TC = 25°C
TC = 125°C
60
1.2 1.75 2.4
0.68 0.94
0.07 1
1.3 10
10 100
IGSSR
Reverse gate current, drain short
circuited to source
VGS = – 20 V, VDS = 0
10 100
rDS(on)
Static drain-source on-state
resistance
VGS = 15 V, ID = 7.5 A,
See Notes 3 and 4 and
Figures 5 and 6
TC = 25°C
TC = 125°C
0.09 0.125
0.15 0.21
gfs Forward transconductance
Ciss
Short-circuit input capacitance,
common source
VDS = 15 V, ID = 5 A,
See Notes 3 and 4
3.3 4.7
490
Coss
Short-circuit output capacitance,
common source
VDS = 25 V, VGS = 0,
f = 300 kHz
285
Crss
Short-circuit reverse transfer
capacitance, common source
90
NOTES: 3. Technique should limit TJ – TC to 10°C maximum.
4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
UNIT
V
V
V
µA
nA
nA
S
pF
source-drain diode characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
VSD
trr
QRR
Forward on voltage
Reverse recovery time
Total source-drain diode charge
IS = 7.5 A, VGS = 0,
di/dt = 100 A/µs,
VDS = 48 V, See Figure 1
0.8 1.3 V
200 ns
1.5 µC
resistive-load switching characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
td(on)
td(off)
tr
tf
Qg
Qgs
Qgd
LD
LS
Turn-on delay time
Turn-off delay time
Rise time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Internal drain inductance
Internal source inductance
VDD = 25 V, RL = 6.7 , ten = 10 ns,
t dis = 10 ns, See Figure 2
VDS = 48 V, ID = 2.5 A,
See Figure 3
VGS = 10 V,
12
100
ns
43
5
13.6 18
8.3 11 nC
5.3 7
7
nH
7
thermal resistance
RθJA
RθJC
PARAMETER
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
TEST CONDITIONS
All outputs with equal power
All outputs with equal power
One output dissipating power
MIN TYP MAX UNIT
62.5 °C/W
1.5 °C/W
3.3 °C/W
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265





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