DMOS ARRAY. TPIC2601 Datasheet

TPIC2601 ARRAY. Datasheet pdf. Equivalent

Part TPIC2601
Description 6-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
Feature TPIC2601 6-CHANNEL COMMON-SOURCE POWER DMOS ARRAY SLIS048A – NOVEMBER 1996 – REVISED JANUARY 1998 .
Manufacture etcTI
Datasheet
Download TPIC2601 Datasheet



TPIC2601
TPIC2601
6-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS048A – NOVEMBER 1996 – REVISED JANUARY 1998
D Low rDS(on) . . . 0.25 Typ
D High Output Voltage . . . 60 V
D Pulsed Current . . . 10 A Per Channel
D Avalanche Energy Capability . . . 105 mJ
D Input Transient Protection . . . 2000 V
KTC or KTD† PACKAGE
(TOP VIEW)
15
14
13
12
DRAIN6
GATE6
DRAIN5
GATE5
description
11 DRAIN4
10 DRAIN4
The TPIC2601 is a monolithic power DMOS array
that consists of six electrically isolated N-channel
enhancement-mode DMOS transistors
configured with a common source and open
drains. Each transistor features integrated
high-current zener diodes to prevent gate
damage in the event that an overstress condition
occurs. These zener diodes also provide up to
2000 V of ESD protection when tested using the
9 GATE4
8 SOURCE/GND
7 GATE3
6 DRAIN3
5 DRAIN3
4 GATE2
3 DRAIN2
2 GATE1
1 DRAIN1
human-body model.
TI Japan only
The TPIC2601 is offered in a 15-pin PowerFLEX(KTC) package and is characterized for operation over the
case temperature range of – 40°C to 125°C. A 15-pin PowerFLEX(KTD) package is also available for TI Japan
only.
schematic
2
GATE1
DRAIN1
1
Q1
DRAIN2
GATE2 3
4
Q2
DRAIN3
GATE3
7
Q3
5, 6
DRAIN4
10, 11
GATE4
Q4 9
DRAIN5
13
GATE5
Q5 12
DRAIN6
15
Q6
14
GATE6
8
SOURCE/GND
NOTE A: For correct operation, no drain terminal may be taken below GND.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerFLEX is a trademark of Texas Intruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1998, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
1



TPIC2601
TPIC2601
6-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS048A – NOVEMBER 1996 – REVISED JANUARY 1998
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-to-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 9 V to 18 V
Continuous drain current, each output, all outputs on, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
Pulsed drain current, each output, IOmax, TC = 25°C (see Note 1 and Figure 7) . . . . . . . . . . . . . . . . . . . 10 A
Continuous gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 25 mA
Pulsed gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 250 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4 and 16) . . . . . . . . . . . . . . . . . . . . . . . 105 mJ
Continuous total power dissipation at (or below) TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 W
Power dissipation at (or below) TC = 75°C, all outputs on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18.75 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V(BR)DSX
VGS(th)
VGS(th)match
V(BR)GS
V(BR)SG
Drain-to-source breakdown voltage
Gate-to-source threshold voltage
Gate-to-source threshold voltage matching
Gate-to-source breakdown voltage
Source-to-gate breakdown voltage
VDS(on)
Drain-to-source on-state voltage
ID = 250 µA,
ID = 1 mA,
See Figure 5
IGS = 250 µA
ISG = 250 µA
ID = 2 A,
See Notes 2 and 3
VGS = 0
VDS = VGS,
VGS = 10 V,
VF(SD)
Forward on-state voltage, source-to-drain
IS = 2A,
VGS = 0,
See Notes 2 and 3 and Figure 12
IDSS
IGSSF
Zero-gate-voltage drain current
Forward gate current, drain short circuited to
source
VDS = 48 V,
VGS = 0
VGS = 10 V,
TC = 25°C
TC = 125°C
VDS = 0
IGSSR
Reverse gate current, drain short circuited to
source
VSG = 5 V,
VDS = 0
MIN TYP
60
1.5 2.05
5
18
9
0.5
0.85
0.05
0.5
20
10
rDS(on)
Static drain-to-source on-state resistance
VGS = 10 V,
ID =2 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 25°C
TC = 125°C
0.25
0.4
gfs Forward transconductance
VDS = 15 V,
See Notes 2 and 3
and Figure 9
ID = 1 A
1.3 1.95
Ciss
Coss
Crss
Short-circuit input capacitance, common source
Short-circuit output capacitance, common
source
Short-circuit reverse transfer capacitance,
common source
VDS = 25 V,
f = 1 MHz,
VGS = 0,
See Figure 11
180
110
80
NOTES: 2. Technique should limit TJ – TC to 10°C maximum.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
MAX
2.2
40
0.6
1
1
10
200
100
0.3
0.5
225
138
100
UNIT
V
V
mV
V
V
V
V
µA
nA
nA
S
pF
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)