DMOS ARRAY. TPIC3302 Datasheet

TPIC3302 ARRAY. Datasheet pdf. Equivalent

Part TPIC3302
Description 3-CHANNEL COMMON-DRAIN POWER DMOS ARRAY
Feature ą • Low rDS(on) . . . 0.4 Ω Typ • High-Voltage Outputs . . . 60 V • Pulsed Current . . . 5 A Per Cha.
Manufacture etcTI
Total Page 12 Pages
Datasheet
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TPIC3302
ą
Low rDS(on) . . . 0.4 Typ
High-Voltage Outputs . . . 60 V
Pulsed Current . . . 5 A Per Channel
Fast Commutation Speed
description
TPIC3302
3ĆCHANNEL COMMONĆDRAIN POWER DMOS ARRAY
ą
SLIS021B − APRIL 1994 − REVISED JULY 1995
D PACKAGE
(TOP VIEW)
SOURCE1
GATE2
SOURCE2
SOURCE3
1
2
3
4
8 GATE1
7 GND
6 DRAIN
5 GATE3
The TPIC3302 is a monolithic power DMOS array that consists of three electrically isolated N-channel
enhancement-mode DMOS transistors configured with a common drain and open sources. The TPIC3302 is
offered in a standard eight-pin small-outline surface-mount (D) package.
The TPIC3302 is characterized for operation over the case temperature range of − 40°C to 125°C.
schematic
DRAIN
6
Q1
8
GATE1
Q2
Z1 2
GATE2
Q3
Z2 5
GATE3
D1
Z3
1
SOURCE1
3
SOURCE2
4
SOURCE3
7
GND
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous drain current, each output, all outputs on, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Continuous source-to-drain diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Pulsed drain current, each output, TC = 25°C (see Note 1 and Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 A
Single-pulse avalanche energy, TC = 25°C, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 mJ
Continuous total power dissipation at (or below) TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.95 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS
77251−1443
Copyright 1995, Texas Instruments Incorporated
2−1



TPIC3302
TPIC3302
3ĆCHANNEL COMMONĆDRAIN POWER DMOS ARRAY
ą
SLIS021B − APRIL 1994 − REVISED JULY 1995
ą
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
V(BR)DSX
VGS(th)
V(BR)
Drain-to-source breakdown voltage
Gate-to-source threshold voltage
Reverse drain-to-GND breakdown voltage
(across D1)
ID = 250 µA,
ID = 1 mA,
VGS = 0
VDS = VGS
Drain-to-GND current = 250 µA
60
1.5 1.85
100
2.2
VDS(on) Drain-to-source on-state voltage
ID = 1 A,
VGS = 10 V,
See Notes 2 and 3
0.4 0.475
VF Forward on-state voltage, GND-to-drain
ID = 1 A,
See Notes 2 and 3
2
VF(SD)
Forward on-state voltage, source-to-drain
IS = 1 A,
VGS = 0,
See Notes 2 and 3
0.9 1.1
IDSS
IGSSF
IGSSR
Ilkg
rDS(on)
Zero-gate-voltage drain current
Forward gate current, drain short circuited to source
Reverse gate current, drain short circuited to source
Leakage current, drain-to-GND
Static drain-to-source on-state resistance
VDS = 48 V,
VGS = 0
VGS = 16 V,
VSG = 16 V,
VR = 48 V
VGS = 10 V,
ID = 1 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 25°C
TC = 125°C
VDS = 0
VDS = 0
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
0.05 1
0.5 10
10 100
10 100
0.05 1
0.5 10
0.4 0.475
0.63 0.7
gfs Forward transconductance
VDS = 10 V,
ID = 0.5 A,
See Notes 2 and 3
0.85 1.02
Ciss
Coss
Crss
Short-circuit input capacitance, common source
Short-circuit output capacitance, common source
Short-circuit reverse-transfer capacitance,
common source
VDS = 25 V,
f = 1 MHz
VGS = 0,
115 145
60 75
30 40
NOTES: 2. Technique should limit TJ − TC to 10°C maximum, pulse duration 5 ms.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
UNIT
V
V
V
V
V
V
µA
nA
nA
µA
S
pF
source-to-drain diode characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
trr(SD) Reverse-recovery time
QRR Total diode charge
IS = 0.5 A, VGS = 0, VDS = 48 V,
di/dt = 100 A/µs,
See Figure 1
MIN TYP MAX UNIT
35 ns
0.03 µC
GND-to-drain diode characteristics, TC = 25°C (see schematic, D1)
PARAMETER
TEST CONDITIONS
trr
QRR
Reverse-recovery time
Total diode charge
IF = 0.5 A,
di/dt = 100 A/µs,
VDS = 48 V,
See Figure 1
MIN TYP MAX UNIT
90 ns
0.2 µC
2−2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS
77251−1443





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