DMOS ARRAY. TPIC5201 Datasheet

TPIC5201 ARRAY. Datasheet pdf. Equivalent

Part TPIC5201
Description DUAL POWER DMOS ARRAY
Feature ą • Two 7.5-A Independent Output Channels, Continuous Current Per Channel • Low rDS(on) . . . 0.09 .
Manufacture etcTI
Total Page 12 Pages
Datasheet
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TPIC5201
ą
Two 7.5-A Independent Output Channels,
Continuous Current Per Channel
Low rDS(on) . . . 0.09 Typical
Output Voltage . . . 60 V
Pulsed Current . . . 15 A Per Channel
Avalanche Energy . . . 120 mJ
description
The TPIC5201 is a power monolithic DMOS array
that consists of dual independent N-channel
enhancement-mode DMOS transistors.
schematic
DRAIN1
3
GATE2
DRAIN2
56
GATE1
1
TPIC5201
DUAL POWER DMOS ARRAY
ą
SLIS020 − SEPTEMBER 1992
KV PACKAGE
(TOP VIEW)
7 SOURCE2
6 DRAIN2
5 GATE2
4 GND
3 DRAIN1
2
1
SOURCE1
GATE1
To ensure correct device operation, the source and the drain of the
same transistor cannot simultaneously be taken below GND.
The tab is electrically connected to GND.
2
SOURCE1
4
GND
7
SOURCE2
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Drain-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-source voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous source-drain diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 A
Pulsed drain current, each output, all outputs on, ID (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 A
Continuous drain current, each output, all outputs on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 A
Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 mJ
Continuous power dissipation at (or below) TA = 25°C (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 W
Continuous power dissipation at (or below) TC = 75°C, all outputs on (see Note 2) . . . . . . . . . . . . . . . 31 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
NOTES:
1. Pulse duration = 10 ms, duty cycle = 6%
2. For operation above 25°C free-air temperature, derate linearly at the rate of 16 mW/°C. For operation above 75°C case temperature,
and with all outputs conducting, derate linearly at the rate of 0.42 W/°C. To avoid exceeding the design maximum virtual junction
temperature, these ratings should not be exceeded.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1992, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
2−1



TPIC5201
TPIC5201
DUAL POWER DMOS ARRAY
ą
SLIS020 − SEPTEMBER 1992
ą
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
V(BR)DS
VTGS
VDS(on)
Drain-source breakdown voltage
Gate-source threshold voltage
Drain-source on-state voltage
VDSS
IGSSF
Zero-gate-voltage drain current
Forward gate current, drain short
circuited to source
ID = 1 µA,
ID = 1 mA,
ID = 7.5 A,
VDS = 48 V,
VGS = 20 V,
VGS = 0
VDS = VGS
VGS = 15 V,
VDS = 0
See Notes 3 and 4
TC = 25°C
TC = 125°C
VDS = 0
60
1.2 1.75
0.68
0.07
1.3
10
IGSSR
Reverse gate current, drain short
circuited to source
VGS = − 20 V, VDS = 0
10
rDS(on)
gfs
Ciss
Static drain-source on-state
resistance
Forward transconductance
Short-circuit input capacitance,
common source
VGS = 15 V, ID = 7.5 A,
See Notes 3 and 4 and Figures 5 and 6
TC = 25°C
TC = 125°C
VDS = 15 V, ID = 5 A, See Notes 3 and 4
0.09
0.15
2.5 4.7
490
Coss
Short-circuit output capacitance,
common source
VDS = 25 V, VGS = 0,
f = 300 kHz
285
Crss
Short-circuit reverse transfer
capacitance, common source
90
NOTES: 3. Technique should limit TJ − TC to 10°C maximum.
4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
MAX
2.4
0.94
1
10
100
100
0.125
0.21
UNIT
V
V
V
µA
nA
nA
S
pF
source-drain diode characteristics, TC = 25°C
PARAMETER
VSD
trr
QRR
Forward on voltage
Reverse-recovery time
Total source-drain diode charge
TEST CONDITIONS
IS = 7.5 A,
di/dt = 100 A/µs,
See Figure 1
VGS = 0,
VDS = 48 V,
MIN TYP MAX UNIT
0.8 1.3 V
200 ns
1.5 µC
resistive-load switching characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Internal drain inductance
Internal source inductance
VDD = 25 V,
tdis = 10 ns,
RL = 6.7 ,
ten = 10 ns,
See Figure 2
VDD = 48 V, ID = 2.5 A,
See Figure 3
VGS = 15,
thermal resistance
RθJA
RθJC
PARAMETER
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
TEST CONDITIONS
All outputs with equal power
All outputs with equal power
One output dissipating power
MIN TYP MAX UNIT
12
43
ns
100
5
13.6 18
8.3 11 nC
5.3 7
7
nH
7
MIN TYP MAX UNIT
62.5 °C/W
2.4 °C/W
3.3 °C/W
2−2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443





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