and driver. SD5200 Datasheet

SD5200 driver. Datasheet pdf. Equivalent

Part SD5200
Description D-MOS FET quad analog switch arrays and driver
Feature D-MOS FEY quad analog switch arrays and driver H Siliconix designed lor Military and Industrial Ap.
Manufacture Siliconix
Total Page 3 Pages
Datasheet
Download SD5200 Datasheet



SD5200
D-MOS FEY quad
analog switch
arrays and
driver
H
Siliconix
designed lor Military and Industrial Applications
SD5200 APPLICATIONS
• Switch Drivers
DESCRIPTION
The SILICONIX D-MOS SD5200 monolithic arrays
of silicon. insulated-gate, field-effect transistors
using the N-channel enchancement mode
technology.
This device is designed to handle a wide variety
of driver applications. The SD5200 is intended for
use as a 30V driver to complement the other switch
products.
FEATURES
• Low Input Capacitance-2.4 pF
• Low Feedback Capacitance-0.3 pF
• Low Output Capacitance-1.3 pF
• ±10V Analog Signal Range
• Low Propagation Delay Time-600 ps
• Low on Resistance-30n
• Low Feedthrough and Feedback Transients
• Ion Implanted for Greater Reliability
• High Channel-to-Channellsolation-107 dB
• Transient Protection for Gates
I, N PACKAGE
(TOP VIEW)
DRAIN 4
NC
GATE 4
SOURCE 4
SOURCE 3
ORDER PART NQ
SD5200N (PLASTIC)
5052001 (SIDE BRAZE)
605200
3 0---1 3 o--:J -{4-1
1~0--04 1~1:.!.o4 I
6 0---1 6o--:J-*
~8 0--0 5 8 d!.1 I:.!.o 5
110--1 "o--j--t<l-
9~ L.!o0-012 9o'!.J
12
140--1
14o--j-*
16~O-O13 16d!.1 ~'3
2
SUBSTRATE
Siliconix
3-95



SD5200
=ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise specified.)
Parameters
8DS200
VOS Drain-ta-Source
+30
VSO Source-te-Drain1
VOB Drai n-to-Substrate
+O.S
+30
VSB Source-te-Substrate
VGS Gate-te-Source
VGB Gate-ta-Substrate
+0.5
+20
+2Q
-0.3
VGO Gate-ta-Drain
+20
'0 Drain CUrrent
Ambient Temperature Range
Storage
Operating
SO
-55 to +1S0
-55 to +125
NOTES
Power Dissipation
Total Package Dissipation2
Individual Transistor Dissipation
640
300
1. Refer to test conditions specified in Electrical Characteristics Table.
2. Derated 5 mW per degree centigrade.
Unit
Vdc
mA
'C
mW
TEST CIRCUIT
SWITCHING TEST CIRCUIT
CROSSTALK MEASUREMENT
Quad Switch
SD50DOISDSD01ISD5002
~rs
v'N~D I
lVo
600
600
Iolrs
0
600
600
";" Crosstalk =20 Log ~
VIN
Where VIN = 1V RMS at 3kHz
TO SCOPE +VQD
510 RL
'1VIN
51
--
";"
Input Pulse
Sample Scope
Ir. tF < 1ns
Pulse Width =100"5
Rep Rate =1 MHz
tr<350pS
RIN= 1MO
CIW20pF
VOUTTO
SCOPE
SWITCHING WAVEFORMS
SWITCHING CHARACTERISTICS
+5V - - -
'-90%
v" 50%
10%
-o v J
~TdIONI
+Voo
90%
\~O%VOUT
50%
ov - - -
-Irl--
90%
10%/
-::;j _'0"
td{ON)(ns)
tr{ns)
• tOFF{ns)
VDD RL TYP MAX TYP MAX TYP MAX
5 660 0.6 1.0 07 1.0 9.0
10 660 0.7 0.8 9.0
15 lk 0.9
1.0 14.0
'tOFF is dependent on RL and does not depend
on the device characteristics.
3-96 Siliconix





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