D-MOS FET. SI2400 Datasheet

SI2400 FET. Datasheet pdf. Equivalent

Part SI2400
Description n-channel enhancement mode lateral D-MOS FET
Feature n-channel enhancement- H mode lateral Silicanix D-MOS FETs designed for Military and Industrial .
Manufacture Siliconix
Total Page 2 Pages
Datasheet
Download SI2400 Datasheet



SI2400
n-channel enhancement- H
mode lateral
Silicanix
D-MOS FETs
designed for Military and Industrial Applications
High Speed Switching
Analog Switch
Multiplexer
Digital Switch
A to D Converters
D to A Converters
Choppers
•• Sample and Hold
BENEFITS
• High Speed Switching
• Ultra Low Feedback
Capacitance
• Low RDS(ON)
• Diode Protected Gate
ABSOLUTE MAXIMUM RATINGS (OC)
Drain Current __ ............................ 50 rnA
Total Device Dissipation at 25°C
Case Temperature .......................... 1.2W
Storage Temperature Range ........ -65° to +150°C
Lead Temperature
(1/16" from case for 10 sec) ................ 300°C
Operating Temperature Range ...... -55° to + 150°C
TO-72
See Section 6
s
Go--J,.J~c
I.~
L
_
_
_D_--l
~
G
0s
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic-DC
Min Typ
Max
Unit
IGSS
BVSO
Gate Reverse Current
Breakdown Voltage Source
to Dram
0.1
10
1
/LA
V
BVSB
Breakdown Voltage Source
to Body
10
V
BVOS
Breakdown Voltage Dram
to Source
15
V
VGS(th)
Gate-Source Threshold
Voltage
0.5
25 V
gf.
Common-Source Forward
Transconductance
25 30
mmhos
ROS(ON)
Dram to Source ReSistance
Characteristic-AC
Small Signal Capacitance
C(GS+GO+GB)
C(GO+OS)
COG
Gate Mode
Drain Mode
Reverse Transfer
8
Min Typ
18
12
Max
17
7
2.5
n
n
n
Unit
pF
pF
pF
Test Conditions
VGS ~ 20V, VOS ~ VGS ~ VBS ~ 0
VGO ~ VBO ~ -5V, 10 ~ 1 /LA
IS ~ 10JLA. VGB ~ 0
VGS ~ VBS ~ OV. 10 ~ 10 /LA
VOS ~ VGS ~ Vth, 10 ~ 10 JLA
VOS ~ 15V, 10 ~ 20 mA, F ~ 1 KHz
10 ~ 5 mAo VBS ~ OV
VGS ~ 5V
VGS ~ 10V
VGS ~ 15V
Test Conditions
VOS ~ 10V, VGS ~ VBS ~ -15V.
f~ 1 MHz
3-104
Silicanix



SI2400
SWITCHING CHARACTERISTICS
TEST CONDITIONS
Typical Switching Waveform
Switching
TO SCOPE +Vee
510 RL
Input pulse td. tr < 1ns
Pulse width = 100ns
Rep rate = 1MHz
SAMPLING SCOPE
tr <360ps
RIN=IMQ
CIN=20pF
I, IOFF
SWITCHING CHARACTERISTICS
VOO
I 150
15
RL
I 668800
lk
Id(ON)(ns)
Typ Max
I0067 10
09
I~ns)
Typ Max
I 10
0078
10
IOFRns)
Typ Max
I9900
140
"tOFF IS dependent on RL and CL and does not depend on the device characteristiCS
Siliconix
3-105





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