SI2400

n-channel enhancement- H mode lateral Silicanix D-MOS FETs designed for Military and Industrial Applications High Speed Switching Analog Switch Multiplexer Digital Switch A to D Converters D to A Converters Choppers Sample and Hold BENEFITS High Speed Switching Ultra Low Feedback Capacitance Low RDS(ON) Diode Protected Gate ABSOLUTE MAXIMUM RATINGS (OC) Drain Current __ ............................ 50 rnA Total Device Dissipation at 25°C Case Temperature .......................... 1.2W Storage Temperature Range ........ -65° to +150°C Lead Temperature (1/16" from case for 10 sec) ................ 300°C Operating Temperature Range ...... -55° to + 150°C TO-72 See Section 6 s Go--J,.J~c I.~ L _ _ _D_--l ~ G 0s ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic-DC Min Typ Max Unit IGSS BVSO Gate Reverse Current Breakdown Voltage Source to Dram 0.1 10 1 /LA V BVSB Breakdown Voltage Source to Body 10 V BVOS Breakdown Voltage Dram to Source 15 V VGS(th) Gate-Source Threshold Voltage 0.5 25 V gf. Common-Source Forward Transconductance 25 30 mmhos ROS(ON) Dram to Source ReSistance Characteristic-AC Small Signal Capacitance C(GS+GO+GB) C(GO+OS) COG Gate Mode Drain Mode Reverse Transfer 8 Min Typ 18 12 Max 17 7 2.5 n n n Unit pF pF pF Test Conditions VGS ~ 20V, VOS ~ VGS ~ VBS ~ 0 VGO ~ VBO ~ -5V, 10 ~ 1 /LA IS ~ 10JLA. VGB ~ 0 VGS ~ VBS ~ OV. 10 ~ 10 /LA VOS ~ VGS ~ Vth, 10 ~ 10 JLA V...