Document
n-channel JFETs
designed for • • •
• Analog Switches • Commutators • Choppers
H
Siliconix
Performance Curves NCB See Section 4
BENEFITS
• Low Insertion Loss
rOS(on) < 50 on (U202)
• Good Off-Isolation
10(off) < 1 nA
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ............... -30 V Gate Current .....•......................... SOmA Total Device Dissipation at 25°C Case Temperature
(Derate 10 mWrC) ......................... 1.8W Storage Temperature Range .............. -65 to +200°C Lead Temperature
(1/16" from case for 10 seconds) ............•. 300°C
TO-tS See Section 6
.~: j \G.C 0
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
1
1-"2 -3
S T
-4 A T
-5
i C
6
IGSS BVGSS VGS(off) 10(011)
lOSS
Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Dram Cutoff Current
Saturation Drain Current (Note 1)
-7 rds(on)
-8
0 Y
C1SS
N
9 Crss
Draln-~ource ON Resistance
Common-Source Input Capacitance (Note 1)
Common-Source Reverse Transfer Capacitance
U200 Min Max
-1 -1 -30 -0.5 -3
1 1
U201 Min Max
-I -1 -30 -1.5 -5
i 1
U202 Min Max
-I -1 -30 -3.5 -10
1 1
Unit
nA JlA V
nA JlA
Test Conditions
VGS = -20 V, VOS = 0
IG=-IJlA,VOS=O VOS = 20 V, 10 = 10 nA
I
150°C
VOS = 10 V, VGS = -12 V 150°C
3 25 15 75
30 150 mA VOS = 20 V, VGS = 0
150 75
50 ohm VGS = 0,10 = 0
f = 1 kHz
30 30 88
30 VOS=20V,VGS=0 pF
8 VOS=O VGS=-12V
f= 1 MHz
NOTE: 1. Pu1se test required, pulsew,dth = 300 Jlsec, duty cycle .;; 3%.
NCB
3-116
Silicanix
.