U235

monolithic dual n-channel JFETs designed for Differential Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage ______ -50 V Gate Current 50mA Total Device Dissipation at 25°C (Derate 1.7 mW/oC to 200°C) 300mW Storage Temperature Range -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ..... 300°C H Siliconix Performance Curves NQP See Section 4 BENEFITS Good Matching Characteristics TO-71 See Section 6 ~~G, G2 s, S2 0,S2 G, ,0 o·o. °1 '0 10 07 G2 s, Bottom View Gt., 0, ~, ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic I-.!. 2 IGSS 13' S BVGSS 1'4 15' I -"- T A T I VGS(o!fl VGS 6 C IG 1- 7 lOSS Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Gate Operating Current Saturation Dram Current (Note 1) 8 91, 19 1'iO I"iT 0 V N A 915 9o, 9o, 112 I~ 1- M I c C1SS Crss 14 en Common-Source Forward Transconductance (Note 11 Common-Source Forward Transconductance (Note 1) Common-Source Output Conductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance EqUivalent Short CircUit Input Noise Voltage Min -50 -05 -0.3 0.5 1000 1000 600 Max -100 -500 -4.5 -4.0 -50 -250 5.0 5000 1600 35 10 6 2 80 Characteristic U231 U232 U233 U234 U235 Max Max Max Max Max Unit Test Conditions pA VGS=-30V. VOS=O nA...