U257 Datasheet PDF


Part Number

U257

Description

matched dual n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
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Download U257 Datasheet PDF


Features Datasheet pdf matched dual n-channel JFET designed for • • • • Wideband DiHerential A mplifiers H Siliconix Performance Cur ves NZP-D, NNZ See Section 4 . BENEF ITS • High Gain through 100 MHz 9fs = 4500 ",mho Minimum • Matching Charac teristics Specified ABSOLUTE MAXIMUM R ATINGS (25°C) Gate-Drain or Gate-Sourc e Voltage ........•...... -25 V Gate Current ...•....•................. .... 50mA Device Dissipation (Each Si de). T A =85°C (Derate 3.85 mWrC) .... ...•.•....•.....•. 250 mW Total Device Dissipation, TA =85°C (Derate 7.7 mWrC) ........ '..........•.... 5 00 mW Storage Temperature Range ..... •..•... -65 to + 200°C Lead Tempe rature (1/16" from case for 10 seconds) ...........•...300°C TO-7B So. Sect.
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U257 Datasheet
matched dual
n-channel JFET
designed for • • •
Wideband DiHerential
Amplifiers
H
Siliconix
Performance Curves NZP-D, NNZ
See Section 4
.
BENEFITS
• High Gain through 100 MHz
9fs = 4500 ",mho Minimum
• Matching Characteristics Specified
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ........•...... -25 V
Gate Current ...•....•.................•.... 50mA
Device Dissipation (Each Side). T A =85°C
(Derate 3.85 mWrC) .......•.•....•.....•. 250 mW
Total Device Dissipation, TA =85°C
(Derate 7.7 mWrC) ........ '..........•.... 500 mW
Storage Temperature Range .....••..•... -65 to + 200°C
Lead Temperature
(1/16" from case for 10 seconds) ...........•...300°C
TO-7B
So. Section 6
~~G, G2
s, 82
S:!
c 405 D2
sO 0&
G1 0
0 G2
20 7
0, ,0
s,
BottomViow
A_I D,
~,
ELECTRICAL CHARACTERISTICS (250 unless otherwise noted)
Characteristic
1
"-2
3
"4
S
T
A
T
I
"5 C
IGSS
BVGSS
VGS(off)
lOSS
6
-;
-8
0
V
109
N
A
M
.I_' l lC
9fs
91s
90S
90S
C1SS
Cr•s
Gate Reverse Current
Gate-Source Breakdown Voltage
Gate.source Cutoff Voltage
Saturation Drain Current (Note 1)
Common-Source r orward Transconductance
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
12 en
Equivalent Short Circuit Input Noise Voltage
13 M
-A
14
'-
T
C
H
15 I
I- N
16 G
!.oSSl
loSS2
IvGS1-VGS2 1
91s1
91$2
90s1-9os2 1
Saturation Drain Current Ratio (Notes 1 and 2)
Differential Gate-Source Voltage
Transconductance Ratio (Note 2)
Oifferential Output Conductance
Min
-25
-1
5
4500
4500
0.85
0.85
Max
-100
-250
-5
40
10,000
10,000
200
200
5
1.2
30
1
100
1
20
Unit
pA
nA
V
mA
JLmho
Test Conditions
IVGS=-15V.VoS=0
15ttC
IG=-lI'A,VoS=O
VoS = 10 V, 10 = 1 nA
VoS = 10V, VGS= 0
VOS=10V,lo=5mA 1= 1 kHz
VoG = 10 V,lo = 5 mA 1= 100 MHz
VoS = 10 V, 10 = 5 mA 1= 1 kHz
1= 100 MHz
pF VoG= 10V,10= 5mA 1= 1 MHz
!JY
VFiZ
1= 10kHz
VoS = 10V, VGS = 0
mV
JLmho
VoG=10V.10=5mA
1= 1 kHz
NOTES:
1. Pulse test required. pulse width = 300 JLS, duty cycle .. 30%.
2. Assumes smaller value in numerator.
NZF-D, NNZ
3-118
SUiccnix




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