U321 Datasheet PDF


Part Number

U321

Description

n-channel JFET

Manufacture

Siliconix

Total Page 1 Pages
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Download U321 Datasheet PDF


Features Datasheet pdf n-channel JFETs designed for • • • • VHF BuRer Amplifiers • IF Amplif iers - H Siliconix - --- ----- Per formance Curves NIP See Section 4 BENE FITS • High Gain gfs = 120,000 ,umho Typical • Wide Dynamic Range • Low Intermodulation Distortion c W oN c W •N c W N N ABSOLUTE MAXIMUM RATINGS (2S0C) Gate·Drain or Gate·Source Volt age ................-25 V Gate Current ............................... 100 rnA Total Device Dissipation (25°C Case T emperature) ......3 W Power Derating (t o 150°C) .................. 24 mWrC St orage Temperature Range .............. -55 to +150°C Operating Temperature Ra nge............. -55 to +150°C Lead Te mperature (1/16" from case for 10 seconds) ...............30.
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U321 Datasheet
n-channel JFETs
designed for
VHF BuRer Amplifiers
IF Amplifiers
-
H
Siliconix
- ---
-----
Performance Curves NIP
See Section 4
BENEFITS
High Gain
gfs = 120,000 ,umho Typical
Wide Dynamic Range
Low Intermodulation Distortion
c
W
oN
c
W
N
c
W
N
N
ABSOLUTE MAXIMUM RATINGS (2S0C)
Gate·Drain or Gate·Source Voltage ................-25 V
Gate Current ............................... 100 rnA
Total Device Dissipation (25°C Case Temperature) ......3 W
Power Derating (to 150°C) .................. 24 mWrC
Storage Temperature Range .............. -55 to +150°C
Operating Temperature Range............. -55 to +150°C
Lead Temperature
(1/16" from case for 10 seconds) ...............300°C
TO-39
See Section 6
.~:
~
l
s0
ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted)
Characteristic
U320
U321
U322
Umt
Min Typ Max Min Typ Max M,n Typ Max
rest Conditions
1 -I
I~ s
I";
4
T
A
15 T
I-
6
I
e
I]
IGSS
VGSloffl
BVGSS
lOSS
VGS(I)
'OS(on)
Gate Reverse Current (Note 1)
Gate-Source Cutoff Voltage
Gate-Source Breakdown Voltage
Saturation Drain Current (Note 21
Gate-Source Forward Voltage
Drain-Source ON ReSistance
-2
-25
100
-3
-0 5
-10
500
1
10
8 9fs
1-
9 0 C1SS
I- V
10
N
A
Crss
111
112
I':'::
M
I
e
Cas
Cgd
13 -en
Common-Source Forward
Transconductance (Note 21
Common-Source Input
Capacitance
Common-Source Reverse
Transfer Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
EqUivalent Short CirCUit
Input NOise Voltage
75 120 200
30
15
12
12
2
14 gig
1-
H
I
15 G g,g
1- H
16 909
117 F
1-'-'- R
GPS
*E Ft
Q
NF
NOTES:
Common Gate Forward
Transconductance
Commen-Gate Input
Conductance
Common-Gate Output
Conductance
Power Gain (Note 3)
Gam-Bandwidth (Note 4)
NOise Figure (Note 3)
55
56
05
9
400
2.5
1. ApprOXimately doubles for every 10°C Increase," TA
2. Pulse test duration = 2 ms.
3. NOise figure ~SSB) and power gain measured In cIrcuIt shown," FIgure 1
4. Computed as 9fs/Crss.
-3
-0 5
-1 -4
-25
80 250
1
11
75 120 200
30
15
12
12
2
55
56
0.5
9
400
25
I-3 nA
VGS=-15V VoS=OV
-0.5 pA
' IT = 100·C
-3 -10 V VoS-5V, 10= 1 mA
-25 IG=-lpA,VoS=OV
200 700 mA VOS=15V,VGS-OV
1 V IG = 1 mA, VoS = a V
8 n VGS - a V, 10 -10 mA
a75 130 200 mmhos VOS = 15 V, VGS = V 1=1 kHz
30
-
15 pF VGS = -10 V, VOS = a V 1= 1 MHz
12 VGS=-10V,10-0
12 VGO=-10V,IS=0
nV
2 ~ VOS = 5 V, 10 = 10 mA 1=1 kHz
55
56
mmho VoG = 20 V, 10 = 25 mA 1= 50MHz
05
9 dB
400 MHz VOS= 15V,VGS=OV
25 dB ValL= 20 V,!JL- 25 mA.11 = 30 MHz
NIP
Silicanix
3-123




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